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NTMFS6H852NLT1G PDF预览

NTMFS6H852NLT1G

更新时间: 2024-09-16 11:14:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 226K
描述
Power MOSFET, Single N-Channel, 80V, 42A, 13.1mΩ

NTMFS6H852NLT1G 数据手册

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MOSFET - Power, Single  
N-Channel  
80 V, 13.1 mW, 42 A  
NTMFS6H852NL  
Features  
www.onsemi.com  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
These Devices are PbFree and are RoHS Compliant  
13.1 mW @ 10 V  
17 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
80 V  
42 A  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
80  
Unit  
V
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
D (5,6)  
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
42  
A
C
D
q
JC  
T
C
29  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
54  
W
A
D
G (4)  
R
(Note 1)  
q
JC  
T
C
= 100°C  
27  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
11  
S (1,2,3)  
NCHANNEL MOSFET  
q
JA  
T = 100°C  
A
8
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.6  
1.8  
208  
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
MARKING  
DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
°C  
J
stg  
1
+175  
S
S
S
G
D
D
6H852L  
AYWZZ  
DFN5  
(SO8FL)  
CASE 488AA  
STYLE 1  
Source Current (Body Diode)  
I
S
45  
A
Single Pulse DraintoSource Avalanche  
E
AS  
207  
mJ  
Energy (I  
= 2.2 A)  
L(pk)  
D
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
6H852L = Specific Device Code  
(1/8from case for 10 s)  
A
Y
= Assembly Location  
= Year  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.8  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
42  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
December, 2019 Rev. 0  
NTMFS6H852NL/D  
 

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