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NTMFS6H824NT1G PDF预览

NTMFS6H824NT1G

更新时间: 2024-09-16 11:12:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 222K
描述
Power MOSFET, Single N-Channel, 80V, 103A, 4.5mΩ

NTMFS6H824NT1G 数据手册

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MOSFET - Power, Single  
N-Channel  
80 V, 4.5 mW, 107 A  
NTMFS6H824N  
Features  
www.onsemi.com  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
These Devices are PbFree and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
80 V  
4.5 mW @ 10 V  
107 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
80  
Unit  
V
V
DSS  
D (5,6)  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
103  
82  
A
C
D
q
JC  
T
C
(Notes 1, 3)  
Steady  
State  
G (4)  
Power Dissipation  
T
C
P
115  
58  
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
S (1,2,3)  
NCHANNEL MOSFET  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
19  
q
JA  
T = 100°C  
A
14  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.8  
1.9  
680  
W
D
MARKING  
DIAGRAM  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
1
S
S
S
G
D
D
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
°C  
J
stg  
DFN5  
(SO8FL)  
CASE 488AA  
STYLE 1  
6H824N  
AYWZZ  
+175  
Source Current (Body Diode)  
I
S
96  
A
D
Single Pulse DraintoSource Avalanche  
E
AS  
736  
mJ  
Energy (I  
= 7 A)  
L(pk)  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
1.3  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
39.8  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
June, 2020 Rev. 2  
NTMFS6H824N/D  
 

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