Datasheet > NTMFS6H818NLT1G

NTMFS6H818NLT1G

更新时间： 2024-11-06 11:15:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	220K
描述
MOSFET - Power, Single, N-Channel, 80 V, 3.2mΩ 135 A - NTMFS6H818NL

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NTMFS6H818NLT1G 数据手册

MOSFET - Power, Single

N-Channel

80 V, 3.2 mW, 135 A

NTMFS6H818NL

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

3.2 mW @ 10 V

4.1 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

80 V

135 A

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

D (5,6)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

135

(Notes 1, 3)

Steady

State

Power Dissipation

140

G (4)

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

S (1,2,3)

N−CHANNEL MOSFET

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.8

1.9

772

(Notes 1, 2)

T = 100°C

MARKING

DIAGRAM

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

6H818L

AYWZZ

Source Current (Body Diode)

116

707

Single Pulse Drain−to−Source Avalanche

Energy (I

= 9.3 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

1.1

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

March, 2020 − Rev. 0

NTMFS6H818NL/D

12 3 4 5 6 7

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与NTMFS6H818NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFS6H818NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，123A，3.7mΩ
NTMFS6H824NLT1G	ONSEMI	获取价格	Power MOSFET 80V, 110A, 4.0 mOhm, Single N-Channel, SO8-FL.
NTMFS6H824NT1G	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 80V, 103A, 4.
NTMFS6H836NLT1G	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 80V, 77A, 6.2 mOhm
NTMFS6H848NLT1G	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 80V, 59A, 8.8 mOhm
NTMFS6H852NLT1G	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 80V, 42A, 13.
NTMFS6H858NLT1G	ONSEMI	获取价格	Power MOSFET 80V, 30A, 19.5 mOhm, Single N-Channel, SO8-FL.
NTMFS6H864NLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, 80 V, 29mΩ
NTMFS7D5N15MC	ONSEMI	获取价格	N-Channel Shielded Gate PowerTrench® MOSFET 1
NTMFS7D8N10GTWG	ONSEMI	获取价格	N-Channel Shielded Gate PowerTrench® MOSFET 1

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