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NTMFS6H801NT1G

更新时间： 2024-11-06 11:15:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 254K
描述
单 N 沟道，功率 MOSFET，80V，153A，2.8mΩ

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NTMFS6H801NT1G 数据手册

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NTMFS6H801N  
MOSFET – Power, Single,  
N-Channel  
80 V, 2.8 mW, 157 A  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
• These Devices are Pb−Free and are RoHS Compliant  
(BR)DSS  
DS(ON)  
80 V  
2.8 mW @ 10 V  
157 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
D (5)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
157  
111  
166  
83  
A
C
D
q
JC  
T
C
(Notes 1, 3)  
G (4)  
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
S (1,2,3)  
N−CHANNEL MOSFET  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
23  
q
JA  
T = 100°C  
A
16  
(Notes 1, 2, 3)  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
3.8  
1.9  
900  
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
1
A
p
S
S
S
G
D
D
6H801N  
AYWZZ  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
+175  
Source Current (Body Diode)  
I
S
138  
960  
A
D
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Energy (I  
= 12.2 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
0.9  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
39  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
June, 2019 − Rev. 2  
NTMFS6H801N/D  
 
1234567

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