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NTMFS6D1N08HT1G PDF预览

NTMFS6D1N08HT1G

更新时间: 2024-09-16 11:15:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 237K
描述
功率 MOSFET,80V,N 沟道,89A,5.5mΩ,SO8-FL

NTMFS6D1N08HT1G 数据手册

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NTMFS6D1N08H  
MOSFET – Power, Single,  
N-Channel  
80 V, 5.5 mW, 89 A  
Features  
www.onsemi.com  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
These Devices are PbFree, Halogen Free/BFR Free, Beryllium Free  
and are RoHS Compliant  
5.5 mW @ 10 V  
8.0 mW @ 6 V  
80 V  
89 A  
Typical Applications  
Synchronous Rectification  
ACDC and DCDC Power Supplies  
ACDC Adapters (USB PD) SR  
Load Switch  
D (5,6)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G (4)  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
80  
Unit  
V
V
DSS  
S (1,2,3)  
NCHANNEL MOSFET  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
T
= 25°C  
I
89  
A
C
D
Current R  
(Note 1)  
q
JC  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Note 1)  
P
104  
17  
W
A
D
R
q
JC  
D
Continuous Drain  
Current R  
T = 25°C  
A
I
D
1
S
S
S
G
D
D
q
JA  
Steady  
State  
(Notes 1, 2)  
DFN5  
(SO8FL)  
CASE 488AA  
STYLE 1  
6D1N08  
AYWZZ  
Power Dissipation  
P
3.8  
W
D
R
(Notes 1, 2)  
q
JA  
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
468  
A
A
p
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
87  
A
Single Pulse DraintoSource Avalanche  
E
AS  
465  
mJ  
Energy (I = 5.9 A)  
AV  
ORDERING INFORMATION  
Lead Temperature Soldering Reflow for Solder-  
T
300  
°C  
L
ing Purposes (1/8from case for 10 s)  
Device  
NTMFS6D1N08HT1G  
Package  
Shipping†  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
DFN5  
1500 /  
(PbFree) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Value  
1.44  
40  
Unit  
JunctiontoCase Steady State (Note 1)  
JunctiontoAmbient Steady State (Note 1)  
R
°C/W  
q
JC  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using 1 in pad size, 1 oz. Cu pad.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
May, 2019 Rev. 3  
NTMFS6D1N08H/D  
 

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