Datasheet > NTMFD4902NFT1G

NTMFD4902NFT1G

更新时间： 2024-11-21 01:11:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	109K
描述
Dual N-Channel Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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NTMFD4902NFT1G 数据手册

NTMFD4902NF

Dual N-Channel Power

MOSFET with Integrated

Schottky

30 V, High Side 18 A / Low Side 23 A, Dual

N−Channel SO8FL

www.onsemi.com

MAX

I MAX

(BR)DSS

DS(ON)

Features

6.5 mW @ 10 V

10 mW @ 4.5 V

4.1 mW @ 10 V

6.2 mW @ 4.5 V

Q1 Top FET

30 V

• Co−Packaged Power Stage Solution to Minimize Board Space

• Low Side MOSFET with Integrated Schottky

• Minimized Parasitic Inductances

• Optimized Devices to Reduce Power Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

18 A

23 A

Q2 Bottom

FET

30 V

(2, 3, 4, 9)

Applications

• DC−DC Converters

• System Voltage Rails

• Point of Load

(1) G1

S1/D2 (10)

(8) G2

S2 (5, 6, 7)

PIN CONNECTIONS

D1 4

5 S2

6 S2

7 S2

8 G2

D1 3

D1 2

G1 1

S1/D2

(Bottom View)

MARKING

DIAGRAM

4902NF

AYWZZ

DFN8

CASE 506BX

4902NF = Specific Device Code

= Assembly Location

= Year

= Work Week

= Lot Traceability

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

September, 2015 − Rev. 5

NTMFD4902NF/D

12 3 4 5 6 7...10

中文翻译

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NTMFD4902NFT1G 替代型号

型号	品牌	替代类型	描述	数据表
NTMFD4902NFT3G	ONSEMI	类似代替	Dual N-Channel Power MOSFET
NTMFD4901NFT1G	ONSEMI	类似代替	30 V, High Side 18 A / Low Side 30 A, Dual Nâ

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