Datasheet > NTMFD4C20NT3G

NTMFD4C20NT3G

更新时间： 2024-11-21 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	124K
描述
双 N 沟道，功率 MOSFET，30V

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中文翻译

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技术参数
数据手册

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NTMFD4C20NT3G 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	9 weeks
风险等级：	5.7	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Tin (Sn)
Base Number Matches：	1

NTMFD4C20NT3G 数据手册

NTMFD4C20N

Dual N-Channel Power

MOSFET

30 V, High Side 18 A / Low Side 27 A, Dual

N−Channel SO8FL

www.onsemi.com

Features

MAX

I MAX

(BR)DSS

DS(ON)

• Co−Packaged Power Stage Solution to Minimize Board Space

• Minimized Parasitic Inductances

7.3 mW @ 10 V

10.8 mW @ 4.5 V

3.4 mW @ 10 V

5.2 mW @ 4.5 V

Q1 Top FET

30 V

18 A

27 A

• Optimized Devices to Reduce Power Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Q2 Bottom

FET

Compliant

30 V

Applications

(2, 3, 4, 9)

• DC−DC Converters

• System Voltage Rails

• Point of Load

(1) G1

S1/D2 (10)

(8) G2

S2 (5, 6, 7)

PIN CONNECTIONS

D1 4

5 S2

6 S2

7 S2

8 G2

D1 3

D1 2

G1 1

S1/D2

(Bottom View)

MARKING

DIAGRAM

DFN8

4C20N

CASE 506BX

AYWZZ

4C20N = Specific Device Code

= Assembly Location

= Year

= Work Week

= Lot Traceability

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

September, 2016 − Rev. 4

NTMFD4C20N/D

12 3 4 5 6 7...12

中文翻译

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