Datasheet > NTMFD5C680NLT1G

NTMFD5C680NLT1G

更新时间： 2023-09-03 20:30:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	212K
描述
双 N 沟道，功率 MOSFET，60V，26A，28mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMFD5C680NLT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Dual

N-Channel

60 V, 28 mW, 26 A

MAX

I MAX

(BR)DSS

DS(ON)

28 mW @ 10 V

41 mW @ 4.5 V

60 V

26 A

NTMFD5C680NL

Dual N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

MARKING

DIAGRAM

DSS

D1 D1

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

XXXXXX

AYWZZ

DFN8 5x6

(SO8FL)

CASE 506BT

(Notes 1, 2, 3)

Steady

State

Power Dissipation

D2 D2

(Notes 1, 2)

= 100°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Continuous Drain

Current R

T = 25°C

7.4

5.5

3.2

1.6

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

(Notes 1 & 2)

T = 100°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (I

= 5 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

6.27

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

46.6

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2022 − Rev. P4

NTMFD5C680NL/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTMFD5C680NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFD6H840NLT1G	ONSEMI	获取价格	Power Field-Effect Transistor
NTMFD6H846NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80V, 31A, 15mΩ
NTMFS002N10MCLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel 100 V, 2.8
NTMFS002P03P8ZT1G	ONSEMI	获取价格	MOSFET, Power -30V P-Channel, SO-8FL
NTMFS003P03P8ZT1G	ONSEMI	获取价格	MOSFET, Power -30V P-Channel, SO-8FL
NTMFS005N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 105A, 5.1
NTMFS005P03P8ZT1G	ONSEMI	获取价格	MOSFET, Power -30V P-Channel, SO-8FL
NTMFS006N08MC	ONSEMI	获取价格	N-Channel Shielded Gate PowerTrench® MOSFET 8
NTMFS006N12MCT1G	ONSEMI	获取价格	Power MOSFET, 120V Single N channel 93A, 6m Ohm in Power56 package
NTMFS008N12MCT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 120V, 79A, 8mΩ

与NTMFD5C680NLT1G相关文章

解读BAV99LT1数据手册：产品特性、电气参数及替换型号推荐
2024-06-18

1
资料解析：P82B96TD引脚图说明、电气参数
2024-06-18

1
ATA6621N数据手册解读：产品特性、引脚图信息、电气参数
2024-06-18

4
一文AO3400引脚图、参数、产品特性
2024-06-18

2

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFD5C680NLT1G

NTMFD5C680NLT1G 数据手册

与NTMFD5C680NLT1G相关器件

与NTMFD5C680NLT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFD5C680NLT1G

NTMFD5C680NLT1G 数据手册

与NTMFD5C680NLT1G相关器件

与NTMFD5C680NLT1G相关文章

您还可以找

您在本页遇到什么问题？