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NTMFD6H840NLT1G

更新时间： 2024-01-30 15:21:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 123K
描述
Power Field-Effect Transistor

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中文翻译

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NTMFD6H840NLT1G 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
Factory Lead Time：20 weeks风险等级：5.75
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NTMFD6H840NLT1G 数据手册

 浏览型号NTMFD6H840NLT1G的Datasheet PDF文件第2页浏览型号NTMFD6H840NLT1G的Datasheet PDF文件第3页浏览型号NTMFD6H840NLT1G的Datasheet PDF文件第4页浏览型号NTMFD6H840NLT1G的Datasheet PDF文件第5页浏览型号NTMFD6H840NLT1G的Datasheet PDF文件第6页 
NTMFD6H840NL  
Power MOSFET  
80 V, 6.9 mW, 74 A, Dual N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
6.9 mꢂ @ 10 V  
8.8 mꢂ @ 4.5 V  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
80 V  
74 A  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
74  
A
C
D
Dual N−Channel  
ꢀ
JC  
T
C
52  
(Notes 1, 2, 3)  
D1  
D2  
Steady  
State  
Power Dissipation  
T
C
P
90  
W
A
D
R
(Notes 1, 2)  
ꢀ
JC  
T
C
= 100°C  
45  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
14  
G1  
G2  
ꢀ
JA  
T = 100°C  
A
10  
(Notes 1, 2, 3)  
Steady  
State  
S1  
S2  
Power Dissipation  
T = 25°C  
A
P
3.1  
1.5  
336  
W
D
R
(Notes 1, 2)  
ꢀ
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ꢁ s  
I
DM  
A
MARKING  
DIAGRAM  
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
D1 D1  
S1  
G1  
S2  
G2  
D1  
1
Source Current (Body Diode)  
I
75  
A
S
D1  
D2  
D2  
XXXXXX  
AYWZZ  
DFN8 5x6  
(SO8FL)  
CASE 506BT  
Single Pulse Drain−to−Source Avalanche  
E
AS  
297  
mJ  
Energy (T = 25°C, I  
= 4.7 A)  
J
L(pk)  
D2 D2  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
1.67  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
ꢀ
JC  
R
48.7  
ꢀ
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
April, 2019 − Rev. 0  
NTMFD6H840NL/D  
 
123456

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