Datasheet > NTMFS0D7N04XLT1G

NTMFS0D7N04XLT1G

更新时间： 2023-09-03 20:36:01

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	221K
描述
Power MOSFET, Single, N-Channel, 40V, 0.7mΩ, 349A, SO8-FL 5x6

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NTMFS0D7N04XLT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel, Logic Level,

SO8FL

MAX

I MAX

(BR)DSS

DS(ON)

0.7 mW @ 10 V

1.1 mW @ 4.5 V

40 V

349 A

40 V, 0.7 mW, 349 A

D (5)

NTMFS0D7N04XL

Features

• Low R

G (4)

to Minimize Conduction Loss

DS(on)

• Low Q with Soft Recovery to Minimize E Loss and Voltage

S (1,2,3)

N−CHANNEL MOSFET

Spike

• Low Q and Capacitance to Minimize Driving and Switching Loss

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING

DIAGRAM

Typical Applications

• High Switching Frequency DC−DC Conversion

• Synchronous Rectification

DFN5 (SO−8FL)

CASE 488AA

0D7N4L

AYWZZ

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

0D7N4L = Specific Device Code

= Assembly Location

= Year

= Work Week

= Lot Traceabililty

DSS

Gate−to−Source Voltage

Continuous Drain Current

(Note 2)

= 25°C

= 100°C

= 25°C

= 100°C

= 25°C,

349

247

167

Power Dissipation (Note 2)

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 6 of this data sheet.

Pulsed Drain Current

1667

t = 100 ms

Pulsed Source Current

(Body Diode)

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

STG

Source Current (Body Diode)

256

470

Single Pulse Avalanche Energy (I = 97 A)

(Note 3)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

3. E of 470 mJ is based on started T = 25°C, I = 97 A, V = 32 V,

4. R

= 10 V, 100% avalanche tested.

Thermal Resistance − Junction to Case Top = 20 °C/W.

JCT

Publication Order Number:

June, 2023 − Rev. 2

NTMFS0D7N04XL/D

12 3 4 5 6 7 8

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与NTMFS0D7N04XLT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFS0D8N02P1ET1G	ONSEMI	获取价格	MOSFET, Power, 25V Single N-Channel, SO-8FL
NTMFS0D8N03CT1G	ONSEMI	获取价格	MOSFET, Power, Single N-Channel, 30V, SO-8FL
NTMFS0D9N03CGT1G	ONSEMI	获取价格	MOSFET，功率，30V，N 沟道，SO8FL
NTMFS0D9N04XLT1G	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, 40V, 0.9mΩ,
NTMFS10N3D2C	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，151A，3.2m
NTMFS10N7D2C	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，标准门极，100 V，78 A，7.2 mΩ
NTMFS1D15N03CGT1G	ONSEMI	获取价格	MOSFET，功率 30V N 沟道，SO8FL
NTMFS1D7N03CGT1G	ONSEMI	获取价格	MOSFET, Power, 30V N-Channel, SO8-FL
NTMFS3D2N10MDT1G	ONSEMI	获取价格	N-Channel Shielded Gate PowerTrench® MOSFET 1
NTMFS3D6N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 131A, 3.6

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