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NTMFS002P03P8ZT1G

更新时间： 2023-09-03 20:29:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 196K
描述
MOSFET, Power -30V P-Channel, SO-8FL

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NTMFS002P03P8ZT1G 数据手册

 浏览型号NTMFS002P03P8ZT1G的Datasheet PDF文件第2页浏览型号NTMFS002P03P8ZT1G的Datasheet PDF文件第3页浏览型号NTMFS002P03P8ZT1G的Datasheet PDF文件第4页浏览型号NTMFS002P03P8ZT1G的Datasheet PDF文件第5页浏览型号NTMFS002P03P8ZT1G的Datasheet PDF文件第6页浏览型号NTMFS002P03P8ZT1G的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
P-Channel, SO8-FL  
-30 V, 1.4 mW, -263 A  
V
R
I
D
(BR)DSS  
DS(on)  
1.4 mW @ −10 V  
2.3 mW @ −4.5 V  
−30 V  
−263 A  
S (1, 2, 3)  
NTMFS002P03P8Z  
G (4)  
Features  
P−Channel  
MOSFET  
• Ultra Low R  
to Improve System Efficiency  
• Advanced Package Technology in 5x6mm for Space Saving and  
DS(on)  
Excellent Thermal Conduction  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
D (5, 6, 7, 8)  
MARKING  
DIAGRAM  
Typical Applications  
• Power Load Switch  
D
• Protection: Reverse Current, Over Voltage, and Reverse Negative  
S
S
S
G
D
D
1
Voltage  
02P3  
AYWZZ  
SO−8 FLAT LEAD  
CASE 506EZ  
• Battery Management  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
−30  
Unit  
V
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
V
DSS  
Gate−to−Source Voltage  
V
GS  
"25  
−263  
−189  
138.9  
V
Continuous Drain Cur-  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
D
A
C
C
C
rent R  
(Notes 1, 2)  
q
JC  
Steady  
State  
ORDERING INFORMATION  
†
Power Dissipation R  
(Notes 1, 2)  
P
D
W
A
Device  
Package  
Shipping  
q
JC  
NTMFS002P03P8ZT1G  
SO8−FL  
(Pb−Free)  
1500 / Tape  
& Reel  
Continuous Drain Cur-  
rent R (Notes 1, 2)  
T = 25°C  
A
I
D
−40.2  
−29  
q
JA  
T = 85°C  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Steady  
State  
Power Dissipation R  
(Notes 1, 2)  
T = 25°C  
A
P
D
3.3  
W
q
JA  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
−648  
A
A
p
Single Pulse Drain−to−Source Avalanche  
E
AS  
212.3  
mJ  
Energy (I =65.16 A)  
L
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
°C  
J
stg  
+150  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State (Drain)  
(Note 2)  
R
0.9  
°C/W  
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
38.3  
°C/W  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming a  
76 mm x 76 mm x 1.6 mm board.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
July, 2022 − Rev. 2  
NTMFS002P03P8Z/D  
 
1234567

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