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NTMFS10N7D2C PDF预览

NTMFS10N7D2C

更新时间: 2024-09-25 11:12:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 473K
描述
功率 MOSFET,单 N 沟道,标准门极,100 V,78 A,7.2 mΩ

NTMFS10N7D2C 数据手册

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NTMFS10N7D2C  
MOSFET – Power Trench,  
N‐Channel, Shielded Gate  
100 V, 78 A, 7.2 mW  
General Description  
www.onsemi.com  
This N-Channel MV MOSFET is produced using  
ON Semiconductor’s advanced PowerTrench process that incorporates  
Shielded Gate technology. This process has been optimized to  
minimize on-state resistance and yet maintain superior switching  
performance with best in class soft body diode.  
V
R
MAX  
I MAX  
D
DS  
DS(ON)  
100 V  
7.2 mW @ 10 V  
23.4 mW @ 6 V  
78 A  
Features  
Shielded Gate MOSFET Technology  
Max r  
Max r  
= 7.2 mW at V = 10 V, I = 28 A  
GS D  
S (1, 2, 3)  
DS(on)  
= 23.4 mW at V = 6 V, I = 14 A  
DS(on)  
GS  
D
50% Lower Qrr than Other MOSFET Suppliers  
Lowers Switching Noise/EMI  
G (4)  
MSL1 Robust Package Design  
100% UIL Tested  
These Devices are PbFree and are RoHS Compliant  
D (5, 6, 7, 8)  
Applications  
N-CHANNEL MOSFET  
Primary DCDC MOSFET  
Synchronous Rectifier in DCDC and ACDC  
Motor Drive  
Solar  
Pin 1  
Top  
Bottom  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Power 56  
(PQFN8)  
CASE 483AE  
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current:  
Value  
100  
20  
Unit  
V
V
DS  
V
GS  
V
MARKING DIAGRAM  
I
D
A
Continuous, T = 25°C (Note 5)  
78  
49  
13  
364  
S
S
D
D
C
Continuous, T = 100°C (Note 5)  
C
$Y&Z&3&K  
NTMFS  
10N7D2C  
Continuous, T = 25°C (Note 1a)  
A
Pulsed (Note 4)  
S
D
D
E
AS  
Single Pulse Avalanche Energy  
(Note 3)  
216  
mJ  
W
G
P
D
Power Dissipation:  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
T
= 25°C  
83  
2.5  
C
T = 25°C (Note 1a)  
A
T , T  
Operating and Storage Junction  
Temperature Range  
55 to +150  
°C  
J
STG  
NTMFS10N7D2C = Specific Device Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
May, 2019 Rev. 2  
NTMFS10N7D2C/D  

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