Datasheet > NTMFS0D5N03CT1G

NTMFS0D5N03CT1G

更新时间： 2023-09-03 20:39:56

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	193K
描述
MOSFET, Power, Single N-Channel, 30V, SO-8FL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMFS0D5N03CT1G 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SO8-FL

30 V, 0.52 mW, 464 A

MAX

I MAX

(BR)DSS

DS(ON)

0.52 mW @ 10 V

0.78 mW @ 4.5 V

30 V

464 A

NTMFS0D5N03C

D (5−8)

Features

• Advanced Package (5x6mm) with Excellent Thermal Conduction

• Ultra Low R

to Improve System Efficiency

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

DS(on)

G (4)

Compliant

S (1,2,3)

N−CHANNEL MOSFET

Applications

• ORing

• Motor Drive

MARKING

DIAGRAMS

• Power Load Switch

• DC−DC Converters

• Battery Management and Protection

DFN5 (SO−8FL)

CASE 506EZ

0D5N3C

AYWZZ

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

= Assembly Location

= Year

= Work Week

= Lot Traceabililty

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

=100°C

= 25°C

464

328

200

Steady

State

(Note 2)

Power Dissipation

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

(Note 2)

Continuous Drain

Current R

T = 25°C

T = 100°C

Steady

State

(Notes 1, 2)

Power Dissipation

T = 25°C

3.9

(Notes 1, 2)

Pulsed Drain Current T = 25°C, t = 10 ms

900

166

467

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (I = 96 A

)

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

STG

+175

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

Publication Order Number:

October, 2021 − Rev. 4

NTMFS0D5N03C/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTMFS0D5N03CT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFS0D5N04XLT1G	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, 40V, 0.49mΩ,
NTMFS0D6N03CT1G	ONSEMI	获取价格	MOSFET, Power, Single N-Channel, 30V, SO-8FL
NTMFS0D7N03CGT1G	ONSEMI	获取价格	MOSFET, Power, 30V N-Channel, SO8-FL
NTMFS0D7N04XLT1G	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, 40V, 0.7mΩ,
NTMFS0D8N02P1ET1G	ONSEMI	获取价格	MOSFET, Power, 25V Single N-Channel, SO-8FL
NTMFS0D8N03CT1G	ONSEMI	获取价格	MOSFET, Power, Single N-Channel, 30V, SO-8FL
NTMFS0D9N03CGT1G	ONSEMI	获取价格	MOSFET，功率，30V，N 沟道，SO8FL
NTMFS0D9N04XLT1G	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, 40V, 0.9mΩ,
NTMFS10N3D2C	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，151A，3.2m
NTMFS10N7D2C	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，标准门极，100 V，78 A，7.2 mΩ

与NTMFS0D5N03CT1G相关文章

共享储能电站：数据驱动与政策引领下的黄金机遇
2024-06-26

11
US1M数据手册解读：产品特性、替换型号推荐
2024-06-26

4
解析BAV99LT1G手册：参数分析、替换型号推荐
2024-06-26

5
解读BSS138PW数据手册：产品特性、电气参数及替换型号推荐
2024-06-26

7

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFS0D5N03CT1G

NTMFS0D5N03CT1G 数据手册

与NTMFS0D5N03CT1G相关器件

与NTMFS0D5N03CT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFS0D5N03CT1G

NTMFS0D5N03CT1G 数据手册

与NTMFS0D5N03CT1G相关器件

与NTMFS0D5N03CT1G相关文章

您还可以找

您在本页遇到什么问题？