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NTMFS4108NT1G PDF预览

NTMFS4108NT1G

更新时间： 2024-11-24 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
5页 91K
描述
Power MOSFET 30 V, 35 A, Single N-Channel, SO-8 Flat Lead Package

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NTMFS4108NT1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：DFN包装说明：5 X 6 MM, 1.27 MM PITCH, LEAD FREE, CASE 488AA-01, DFN6, SOP-8
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.18Is Samacsys：N
雪崩能效等级（Eas）：450 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：22 A最大漏极电流 (ID)：13.5 A
最大漏源导通电阻：0.0022 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：6.25 W最大脉冲漏极电流 (IDM)：203 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTMFS4108NT1G 数据手册

 浏览型号NTMFS4108NT1G的Datasheet PDF文件第2页浏览型号NTMFS4108NT1G的Datasheet PDF文件第3页浏览型号NTMFS4108NT1G的Datasheet PDF文件第4页浏览型号NTMFS4108NT1G的Datasheet PDF文件第5页 
NTMFS4108N  
Power MOSFET  
30 V, 35 A, Single N-Channel,  
SO-8 Flat Lead Package  
http://onsemi.com  
Features  
•ꢀThermally and Electrically Enhanced Packaging Compatible with  
Standard SO-8 Package Footprint  
•ꢀNew Package Provides Capability of Inspection and Probe After  
Board Mounting  
V
R
DS(on)  
TYP  
I MAX  
D
(BR)DSS  
1.8 mW @ 10 V  
2.7 mW @ 4.5 V  
•ꢀUltra Low R  
(at 4.5 V ), Low Gate Resistance and Low Q  
GS G  
DS(on)  
30 V  
35 A  
•ꢀOptimized for Low Side Synchronous Applications  
•ꢀHigh Speed Switching Capability  
Applications  
D
•ꢀNotebook Computer Vcore Applications  
•ꢀNetwork Applications  
•ꢀDC-DC Converters  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain-to-Source Voltage  
Symbol Value Unit  
S
V
30  
$20  
22  
V
V
A
DSS  
Gate-to-Source Voltage  
V
GS  
MARKING  
DIAGRAM  
Continuous Drain  
Current (Note 1)  
T = 25°C  
I
D
A
Steady  
State  
T = 85°C  
A
16  
D
S
S
D
D
t v10 s  
T = 25°C  
35  
A
4108N  
AYWWG  
G
1
Power Dissipation  
(Note 1)  
Steady  
State  
P
2.4  
W
A
D
SO-8 FLAT LEAD  
CASE 488AA  
STYLE 1  
S
T = 25°C  
A
G
t v10 s  
6.25  
13.5  
10  
D
Continuous Drain  
Current (Note 2)  
T = 25°C  
A
I
D
T = 85°C  
A
4108N = Specific Device Code  
A
= Assembly Location  
= Year  
= Work Week  
Steady  
State  
Power Dissipation  
(Note 2)  
P
P
0.91  
W
W
D
T = 25°C  
A
Y
WW  
G
Power Dissipation  
(Note 1)  
100  
203  
D
= Pb-Free Package  
T
= 25°C  
C
R
q
JC  
(Note: Microdot may be in either location)  
Pulsed Drain Current  
t = 10 ms  
p
I
A
DM  
Operating Junction and Storage Temperature  
T , T  
J
-55 to  
150  
°C  
stg  
ORDERING INFORMATION  
Continuous Source Current (Body Diode)  
Single Pulse Drain-to-Source Avalanche  
Energy (V = 30 V, V = 10 V, I = 30 A,  
I
6.0  
A
S
†
Device  
Package  
Shipping  
E
AS  
450  
mJ  
NTMFS4108NT1G SO-8 FL  
(Pb-Free)  
1500 Tape / Reel  
5000 Tape / Reel  
DD  
GS  
PK  
L = 1 mH, R = 25 W)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
NTMFS4108NT3G SO-8 FL  
(Pb-Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface-mounted on FR4 board using 1″ sq. pad size  
(Cu area = 1.127″ sq. [1 oz] including traces).  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Surface-mounted on FR4 board using the minimum recommended pad size  
(Cu area = 0.412″ sq.).  
©ꢀ Semiconductor Components Industries, LLC, 2007  
July, 2007 - Rev. 5  
1
Publication Order Number:  
NTMFS4108N/D  
 
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NTMFS4108NT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFS4108NT3G ONSEMI

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