Datasheet > NTMFS4122N

NTMFS4122N

更新时间： 2024-09-25 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	85K
描述
Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead

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NTMFS4122N 数据手册

NTMFS4122N

Power MOSFET

30 V, 23 A, Single N-Channel,

SO-8 Flat Lead

Features

•ꢀLow R

DS(on)

http://onsemi.com

•ꢀLow Inductance SO-8 Package

•ꢀThis is a Pb-Free Device

Applications

MAX

(Note 1)

DS(on)

TYP

(BR)DSS

•ꢀNotebooks, Graphics Cards

•ꢀDC-DC Converters

•ꢀSynchronous Rectification

4.6 mW @ 10 V

6.3 mW @ 4.5 V

30 V

23 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain-to-Source Voltage

Symbol Value Unit

$20

DSS

Gate-to-Source Voltage

Continuous Drain Current

(Note 1 )

T = 25°C

Steady

State

T = 85°C

t v10 s T = 25°C

Power Dissipation (Note 1) Steady

State

2.2

MARKING

DIAGRAM

T = 25°C

t v10 s

5.8

9.1

6.5

0.9

Continuous Drain Current

(Note 2)

T = 25°C

Steady

State

T = 85°C

4122N

AYWWG

SO-8 FLAT LEAD

CASE 488AA

STYLE 1

Power Dissipation (Note 2)

Pulsed Drain Current

T = 25°C

t = 10 ms

Operating Junction and Storage Temperature

T , T

-55 to

150

°C

stg

4122N = Specific Device Code

= Assembly Location

= Year

= Work Week

Source Current (Body Diode)

7.0

Single Pulse Drain-to-Source Avalanche Energy

(V = 30 V, V = 10 V, I = 21 A, L = 1 mH,

220

= Pb-Free Package

= 25 W)

(Note: Microdot may be in either location)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

THERMAL RESISTANCE MAXIMUM RATINGS

†

Device

Package

Shipping

Parameter

Symbol Value Unit

NTMFS4122NT1G SO-8 FL 1500 Tape & Reel

(Pb-Free)

Junction-to-Ambient - Steady State (Note 1)

Junction-to-Ambient - t v10 s (Note 1)

Junction-to-Ambient - Steady State (Note 2)

56.3

21.5

°C/W

NTMFS4122NT3G SO-8 FL 5000 Tape & Reel

(Pb-Free)

141.6

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface mounted on FR4 board using the minimum recommended pad size

(Cu area = 0.0264 in sq).

*For additional information on our Pb-Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

July, 2007 - Rev. 4

Publication Order Number:

NTMFS4122N/D

12 3 4 5

中文翻译

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与NTMFS4122N相关器件

型号	品牌	获取价格	描述	数据表
NTMFS4122NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead
NTMFS4122NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead
NTMFS4701N	ONSEMI	获取价格	Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package
NTMFS4701NR2	ONSEMI	获取价格	8000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 488AA-01, SO-8
NTMFS4701NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package
NTMFS4701NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package
NTMFS4707N	ONSEMI	获取价格	+12 V Telecom Power Conversion Solutions
NTMFS4707NT1G	ONSEMI	获取价格	+12 V Telecom Power Conversion Solutions
NTMFS4707NT3G	ONSEMI	获取价格	6900mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 488AA-01, SOIC-8
NTMFS4708N	ONSEMI	获取价格	Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL

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