Datasheet > NTMFS4709N

NTMFS4709N

更新时间： 2024-09-25 06:00:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	86K
描述
Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMFS4709N 数据手册

NTMFS4709N

Power MOSFET

30 V, 94 A, Single N-Channel, SOIC-8 FL

Features

•ꢀLow R

to Minimize Conduction Losses

DS(on)

http://onsemi.com

•ꢀLow Capacitance to Minimize Driver Losses

•ꢀOptimized Gate Charge to Minimize Switching Losses

•ꢀThese are Pb-Free Devices

DS(on)

Typ

I Max

(BR)DSS

2.85 mW @ 10 V

4.0 mW @ 4.5 V

Applications

30 V

94 A

•ꢀVCORE Applications

•ꢀDC-DC Converters

•ꢀLow Side Switching

N-Channel

MAXIMUM RATINGS (T =25°C unless otherwise stated)

Rating

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

Symbol

Value

Unit

DSS

T = 25°C

Current R

(Note 1)

T = 85°C

Power Dissipation

(Note 1)

T = 25°C

2.35

MARKING DIAGRAM &

PIN ASSIGNMENT

Continuous Drain

Current R

(Note 2)

T = 25°C

8.0

T = 85°C

Steady

State

4709N

AYWWꢀG

Power Dissipation

(Note 2)

T = 25°C

0.91

SOIC-8 FLAT LEAD

CASE 488AA

STYLE 1

Continuous Drain

Current R

(Note 1)

= 25°C

= 85°C

= 25°C

4709N = Specific Device Code

Power Dissipation

(Note 1)

62.5

= Assembly Location

= Year

= Work Week

Pulsed Drain Cur‐

rent

T = 25°C,

t = 10 ms

140

G = Pb-Free Package

(Note: Microdot may be in either location)

Current limited by

package

T = 25°C

DmaxPkg

ORDERING INFORMATION

Operating Junction and

Storage Temperature

T ,

-55 to

+150

°C

STG

†

Device

Package

Shipping

Source Current (Body Diode)

Drain to Source

62.5

NTMFS4709NT1G SOIC-8 FL 1500ꢀ/ꢀaTpe & Reel

(Pb-Free)

dV/dt

V/ns

Single Pulse Drain-to-Source Avalanche

Energy T = 25°C, V = 50 V, V = 10 V,

450

NTMFS4709NT3G SOIC-8 FL 5000ꢀ/ꢀaTpe & Reel

(Pb-Free)

I = 30 A , L = 1.0 mH, R = 25 W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

July, 2007 - Rev. 3

Publication Order Number:

NTMFS4709N/D

12 3 4 5 6

中文翻译

下载PDF

与NTMFS4709N相关器件

型号	品牌	获取价格	描述	数据表
NTMFS4709NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL
NTMFS4709NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL
NTMFS4741NT1G	ROCHESTER	获取价格	8A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 488AA-01, SO-8
NTMFS4744N	ONSEMI	获取价格	Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL
NTMFS4744NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL
NTMFS4744NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL
NTMFS4747N	ONSEMI	获取价格	Single N-Channel Power MOSFET
NTMFS4747NT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET
NTMFS4747NT3G	ONSEMI	获取价格	Single N-Channel Power MOSFET
NTMFS4821N	ONSEMI	获取价格	Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL

与NTMFS4709N相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

11
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

14
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

81
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

72

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFS4709N

NTMFS4709N 数据手册

与NTMFS4709N相关器件

与NTMFS4709N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFS4709N

NTMFS4709N 数据手册

与NTMFS4709N相关器件

与NTMFS4709N相关文章

您还可以找

您在本页遇到什么问题？