Datasheet > NTMFS4833NS

NTMFS4833NS

更新时间： 2024-09-25 01:14:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	149K
描述
Single NâChannel Power MOSFET

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中文翻译

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数据手册

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NTMFS4833NS 数据手册

NTMFS4833NS

SENSEFET⁾Power MOSFET

30 V, 156 A, Single N−Channel, SO−8 FL

Features

• Accurate, Lossless Current Sensing

• Low R

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

DS(on)

http://onsemi.com

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(ON)

2.2 mW @ 10 V

3.4 mW @ 4.5 V

156 A

127 A

30 V

Applications

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

DRAIN

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

GATE

Kelvin

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

SENSE SOURCE

MARKING

DIAGRAM

Continuous Drain

Current R

T = 25°C

T = 85°C

(Note 1)

(Do Not Connect)

Power Dissipation

T = 25°C

2.31

4833NS

SENSE

KELVIN

(Note 1)

SO−8 FLAT LEAD

CASE 506BQ

AYWZZ

Continuous Drain

Current R

T = 25°C

11.6

0.9

(Do Not Connect)

T = 85°C

Steady

State

(Note 2)

Power Dissipation

T = 25°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

(Note 2)

Continuous Drain

Current R

= 25°C

= 85°C

= 25°C

156

113

(Note 1)

Power Dissipation

86.2

ORDERING INFORMATION

(Note 1)

Pulsed Drain

Current

T = 25°C,

t = 10 ms

312

†

Device

Package

Shipping

NTMFS4833NST1G SO−8 FL 1500 Tape / Reel

(Pb−Free)

Operating Junction and Storage

Temperature

T , T

−55 to

+150

°C

STG

Source Current (Body Diode)

Drain to Source DV/DT

NTMFS4833NST3G SO−8 FL 5000 Tape / Reel

(Pb−Free)

dV/dt

EAS

V/ns

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Single Pulse Drain−to−Source Avalanche

612.5

Energy (T = 25°C, V = 30 V, V = 10 V,

I = 35 A , L = 1.0 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Publication Order Number:

May, 2012 − Rev. 1

NTMFS4833NS/D

12 3 4 5 6 7

中文翻译

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与NTMFS4833NS相关器件

型号	品牌	获取价格	描述	数据表
NTMFS4833NST1G	ONSEMI	获取价格	Single NâChannel Power MOSFET
NTMFS4833NST3G	ONSEMI	获取价格	Single NâChannel Power MOSFET
NTMFS4833NT1G	ONSEMI	获取价格	+12 V Telecom Power Conversion Solutions
NTMFS4833NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
NTMFS4834N	ONSEMI	获取价格	Power MOSFET 30 V, 130 A, Single N−Channel, SO−8FL
NTMFS4834NT1G	ONSEMI	获取价格	-48 V Telecom Power Conversion Solution
NTMFS4834NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 130 A, Single N−Channel, SO−8FL
NTMFS4835N	ONSEMI	获取价格	Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL
NTMFS4835NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL
NTMFS4835NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL

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