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NTMFS4709NT3G

更新时间： 2024-09-25 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
6页 86K
描述
Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL

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中文翻译

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NTMFS4709NT3G 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DFN包装说明：5 X 6 MM, 1.27 MM PITCH, LEAD FREE, CASE 488AA-01, DFN6, SOIC-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.82
Is Samacsys：N雪崩能效等级（Eas）：450 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：94 A
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.0055 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：62.5 W最大脉冲漏极电流 (IDM)：140 A
认证状态：Not Qualified子类别：FET General Purpose Powers
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTMFS4709NT3G 数据手册

 浏览型号NTMFS4709NT3G的Datasheet PDF文件第2页浏览型号NTMFS4709NT3G的Datasheet PDF文件第3页浏览型号NTMFS4709NT3G的Datasheet PDF文件第4页浏览型号NTMFS4709NT3G的Datasheet PDF文件第5页浏览型号NTMFS4709NT3G的Datasheet PDF文件第6页 
NTMFS4709N  
Power MOSFET  
30 V, 94 A, Single N-Channel, SOIC-8 FL  
Features  
•ꢀLow R  
to Minimize Conduction Losses  
DS(on)  
http://onsemi.com  
•ꢀLow Capacitance to Minimize Driver Losses  
•ꢀOptimized Gate Charge to Minimize Switching Losses  
•ꢀThese are Pb-Free Devices  
V
R
DS(on)  
Typ  
I Max  
D
(BR)DSS  
2.85 mW @ 10 V  
4.0 mW @ 4.5 V  
Applications  
30 V  
94 A  
•ꢀVCORE Applications  
•ꢀDC-DC Converters  
•ꢀLow Side Switching  
N-Channel  
D
MAXIMUM RATINGS (T =25°C unless otherwise stated)  
J
Rating  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain  
Symbol  
Value  
30  
Unit  
V
V
DSS  
V
GS  
20  
V
G
T = 25°C  
I
D
18  
A
A
Current R  
(Note 1)  
q
JA  
S
T = 85°C  
A
13  
Power Dissipation  
(Note 1)  
T = 25°C  
P
2.35  
W
A
A
D
D
D
R
q
JA  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Continuous Drain  
Current R  
(Note 2)  
T = 25°C  
A
I
D
11  
8.0  
q
JA  
D
T = 85°C  
A
Steady  
State  
S
S
S
G
D
D
1
4709N  
AYWWꢀG  
G
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
0.91  
W
A
SOIC-8 FLAT LEAD  
CASE 488AA  
STYLE 1  
R
q
JA  
Continuous Drain  
Current R  
(Note 1)  
T
T
T
= 25°C  
= 85°C  
= 25°C  
94  
68  
C
C
C
D
D
q
JC  
4709N = Specific Device Code  
Power Dissipation  
(Note 1)  
P
62.5  
W
A
A
= Assembly Location  
= Year  
= Work Week  
R
q
JC  
Y
WW  
Pulsed Drain Cur‐  
rent  
T = 25°C,  
A
t = 10 ms  
I
140  
140  
DM  
G = Pb-Free Package  
(Note: Microdot may be in either location)  
p
Current limited by  
package  
T = 25°C  
I
A
A
DmaxPkg  
ORDERING INFORMATION  
Operating Junction and  
Storage Temperature  
T ,  
J
-55 to  
+150  
°C  
T
STG  
†
Device  
Package  
Shipping  
Source Current (Body Diode)  
Drain to Source  
I
62.5  
10  
A
S
NTMFS4709NT1G SOIC-8 FL 1500ꢀ/ꢀaTpe & Reel  
(Pb-Free)  
dV/dt  
V/ns  
mJ  
Single Pulse Drain-to-Source Avalanche  
Energy T = 25°C, V = 50 V, V = 10 V,  
E
AS  
450  
NTMFS4709NT3G SOIC-8 FL 5000ꢀ/ꢀaTpe & Reel  
(Pb-Free)  
J
DD  
GS  
I = 30 A , L = 1.0 mH, R = 25 W  
L
pk  
G
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.  
2. Surface-mounted on FR4 board using the minimum recommended pad size.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
July, 2007 - Rev. 3  
1
Publication Order Number:  
NTMFS4709N/D  
 
123456

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