Datasheet > NTMFS4823N

NTMFS4823N

更新时间： 2024-11-12 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	132K
描述
Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL

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NTMFS4823N 数据手册

NTMFS4823N

Power MOSFET

30 V, 30 A, Single N−Channel, SO−8 FL

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These are Pb−Free Device

http://onsemi.com

DS(ON)

MAX

I MAX

Applications

(BR)DSS

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

10.5 mW @ 10 V

18.0 mW @ 4.5 V

30 V

30 A

• High Side Switching

D (5,6)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

Gate−to−Source Voltage

DSS

G (4)

Continuous Drain

Current R

T = 25°C

10.8

T = 85°C

7.8

2.1

S (1,2,3)

N−CHANNEL MOSFET

(Note 1)

Power Dissipation

(Note 1)

T = 25°C

Continuous Drain

T = 25°C

17.4

12.5

5.43

MARKING

DIAGRAM

Current R

10 sec

T = 85°C

Power Dissipation

T = 25°C

t v 10 sec

JA,

Steady

State

4823N

AYWWG

Continuous Drain

Current R

(Note 2)

T = 25°C

6.9

5.0

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

T = 85°C

Power Dissipation

T = 25°C

0.86

(Note 2)

= Assembly Location

= Year

= Work Week

Continuous Drain

Current R

= 25°C

= 85°C

= 25°C

(Note 1)

Power Dissipation

(Note 1)

= Pb−Free Package

32.5

(Note: Microdot may be in either location)

Pulsed Drain

Current

t =10ms

T = 25°C

ORDERING INFORMATION

Current limited by package

T = 25°C

Dmaxpkg

†

Device

Package

Shipping

Operating Junction and Storage

Temperature

T ,

STG

−55 to

°C

+150

NTMFS4823NT1G

SO−8FL

(Pb−Free)

1500 /

Source Current (Body Diode)

Drain to Source dV/dt

32.5

6.0

Tape & Reel

dV/dt

EAS

V/ns

NTMFS4823NT3G

SO−8FL

(Pb−Free)

5000 /

Single Pulse Drain−to−Source Avalanche

Energy (V = 50 V, V = 10 V,

28.8

Tape & Reel

I = 24 A , L = 0.1 mH, R = 25 W)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy

and soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2010

Publication Order Number:

January, 2010 − Rev. 2

NTMFS4823N/D

12 3 4 5 6

中文翻译

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与NTMFS4823N相关器件

型号	品牌	获取价格	描述	数据表
NTMFS4823NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL
NTMFS4823NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL
NTMFS4825NFET1G	ONSEMI	获取价格	30 V, 171 A, Single N.Channel, SO.8 FL
NTMFS4825NFET3G	ONSEMI	获取价格	30 V, 171 A, Single N.Channel, SO.8 FL
NTMFS4833N	ONSEMI	获取价格	+12 V Telecom Power Conversion Solutions
NTMFS4833NS	ONSEMI	获取价格	Single NâChannel Power MOSFET
NTMFS4833NST1G	ONSEMI	获取价格	Single NâChannel Power MOSFET
NTMFS4833NST3G	ONSEMI	获取价格	Single NâChannel Power MOSFET
NTMFS4833NT1G	ONSEMI	获取价格	+12 V Telecom Power Conversion Solutions
NTMFS4833NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL

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