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NTMFS4708NT1G

更新时间： 2024-09-25 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 94K
描述
Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL

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NTMFS4708NT1G 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DFN包装说明：LEAD FREE, CASE 488AA-01, DFN6, SOIC-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.17
Is Samacsys：N外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：7.8 A最大漏源导通电阻：0.01 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTMFS4708NT1G 数据手册

 浏览型号NTMFS4708NT1G的Datasheet PDF文件第2页浏览型号NTMFS4708NT1G的Datasheet PDF文件第3页浏览型号NTMFS4708NT1G的Datasheet PDF文件第4页浏览型号NTMFS4708NT1G的Datasheet PDF文件第5页 
NTMFS4708N  
Power MOSFET  
30 V, 19 A, Single N-Channel, SOIC-8 FL  
Features  
•ꢀFast Switching Times  
•ꢀLow Gate Charge  
http://onsemi.com  
•ꢀLow R  
DS(on)  
•ꢀLow Inductance SOIC-8 Package  
V
R
DS(on)  
Typ  
I Max  
D
•ꢀThese are Pb-Free Devices  
(BR)DSS  
Applications  
7.3 mW @ 10 V  
30 V  
19 A  
•ꢀNotebooks, Graphics Cards  
10.1 mW @ 4.5 V  
•ꢀDC-DC Converters  
•ꢀSynchronous Rectification  
N-Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain-to-Source Voltage  
Symbol Value Unit  
V
DSS  
30  
20  
V
V
A
Gate-to-Source Voltage  
V
GS  
G
T = 25°C  
11.5  
8.0  
19  
Continuous Drain Current  
(Note 1)  
I
D
A
Steady  
State  
T = 85°C  
A
S
t ≤ 10 s T = 25°C  
A
Steady  
State  
2.2  
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
D
W
MARKING DIAGRAM &  
PIN ASSIGNMENT  
t ≤ 10 s  
6.25  
7.8  
5.6  
1.0  
D
T = 25°C  
S
S
S
G
D
D
Continuous Drain Current  
(Note 2)  
I
A
A
D
1
4708N  
AYWWꢀG  
G
T = 85°C  
A
Steady  
State  
SOIC-8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
W
D
D
Pulsed Drain Current  
t
≤ 10 ms  
I
58  
A
4708N = Specific Device Code  
p
DM  
A
= Assembly Location  
= Year  
= Work Week  
Operating Junction and Storage Temperature  
T ,  
J
-55 to  
150  
°C  
Y
WW  
T
STG  
Source Current (Body Diode)  
I
6.25  
245  
A
S
G = Pb-Free Package  
(Note: Microdot may be in either location)  
Single Pulse Drain-to-Source Avalanche  
Energy. V = 25 V, V = 10 V, I = 7.0 A,  
E
AS  
mJ  
DD  
L = 10 mH, R = 25 W  
GS  
PK  
G
ORDERING INFORMATION  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
†
Device  
Package  
Shipping  
THERMAL RESISTANCE MAXIMUM RATINGS  
NTMFS4708NT1G SOIC-8 FL 1500ꢀ/ꢀaTpe & Reel  
(Pb-Free)  
Parameter  
Symbol Value Unit  
°C/W  
NTMFS4708NT3G SOIC-8 FL 5000ꢀ/ꢀaTpe & Reel  
(Pb-Free)  
Junction-to-Ambient – Steady State (Note 1)  
Junction-to-Ambient – t ≤ 10 s (Note 1)  
Junction-to-Ambient – Steady State (Note 2)  
R
q
JA  
R
q
JA  
R
q
JA  
56.5  
20  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
124  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface-mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces).  
2. Surface-mounted on FR4 board using the minimum recommended pad size  
(Cu area = 0.412 in sq).  
©ꢀ Semiconductor Components Industries, LLC, 2007  
July, 2007 - Rev. 2  
1
Publication Order Number:  
NTMFS4708N/D  
 
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