NTMFS4708NT3G

更新时间： 2024-09-25 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	94K
描述
Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL

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NTMFS4708NT3G 数据手册

NTMFS4708N

Power MOSFET

30 V, 19 A, Single N-Channel, SOIC-8 FL

Features

•ꢀFast Switching Times

•ꢀLow Gate Charge

http://onsemi.com

•ꢀLow R

DS(on)

•ꢀLow Inductance SOIC-8 Package

DS(on)

Typ

I Max

•ꢀThese are Pb-Free Devices

(BR)DSS

Applications

7.3 mW @ 10 V

30 V

19 A

•ꢀNotebooks, Graphics Cards

10.1 mW @ 4.5 V

•ꢀDC-DC Converters

•ꢀSynchronous Rectification

N-Channel

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain-to-Source Voltage

Symbol Value Unit

DSS

Gate-to-Source Voltage

T = 25°C

11.5

8.0

Continuous Drain Current

(Note 1)

Steady

State

T = 85°C

t ≤ 10 s T = 25°C

Steady

State

2.2

Power Dissipation

(Note 1)

T = 25°C

MARKING DIAGRAM &

PIN ASSIGNMENT

t ≤ 10 s

6.25

7.8

5.6

1.0

T = 25°C

Continuous Drain Current

(Note 2)

4708N

AYWWꢀG

T = 85°C

Steady

State

SOIC-8 FLAT LEAD

CASE 488AA

STYLE 1

Power Dissipation

(Note 2)

T = 25°C

Pulsed Drain Current

≤ 10 ms

4708N = Specific Device Code

= Assembly Location

= Year

= Work Week

Operating Junction and Storage Temperature

T ,

-55 to

150

°C

STG

Source Current (Body Diode)

6.25

245

G = Pb-Free Package

(Note: Microdot may be in either location)

Single Pulse Drain-to-Source Avalanche

Energy. V = 25 V, V = 10 V, I = 7.0 A,

L = 10 mH, R = 25 W

ORDERING INFORMATION

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

†

Device

Package

Shipping

THERMAL RESISTANCE MAXIMUM RATINGS

NTMFS4708NT1G SOIC-8 FL 1500ꢀ/ꢀaTpe & Reel

(Pb-Free)

Parameter

Symbol Value Unit

°C/W

NTMFS4708NT3G SOIC-8 FL 5000ꢀ/ꢀaTpe & Reel

(Pb-Free)

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤ 10 s (Note 1)

Junction-to-Ambient – Steady State (Note 2)

56.5

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

124

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface-mounted on FR4 board using the minimum recommended pad size

(Cu area = 0.412 in sq).

July, 2007 - Rev. 2

Publication Order Number:

NTMFS4708N/D

12 3 4 5

中文翻译

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NTMFS4708NT3G 替代型号

型号	品牌	替代类型	描述	数据表
NTMFS4708NT1G	ONSEMI	类似代替	Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL

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