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NTMFS4122NT1G PDF预览

NTMFS4122NT1G

更新时间： 2024-09-25 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 85K
描述
Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead

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NTMFS4122NT1G 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：SOT包装说明：LEAD FREE, CASE 488AA-01, SO-8
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
Factory Lead Time：1 week风险等级：5.33
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：14 A
最大漏极电流 (ID)：9.1 A最大漏源导通电阻：0.006 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：5.8 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTMFS4122NT1G 数据手册

 浏览型号NTMFS4122NT1G的Datasheet PDF文件第2页浏览型号NTMFS4122NT1G的Datasheet PDF文件第3页浏览型号NTMFS4122NT1G的Datasheet PDF文件第4页浏览型号NTMFS4122NT1G的Datasheet PDF文件第5页 
NTMFS4122N  
Power MOSFET  
30 V, 23 A, Single N-Channel,  
SO-8 Flat Lead  
Features  
•ꢀLow R  
DS(on)  
http://onsemi.com  
•ꢀLow Inductance SO-8 Package  
•ꢀThis is a Pb-Free Device  
Applications  
I
MAX  
(Note 1)  
D
V
R
DS(on)  
TYP  
(BR)DSS  
•ꢀNotebooks, Graphics Cards  
•ꢀDC-DC Converters  
•ꢀSynchronous Rectification  
4.6 mW @ 10 V  
6.3 mW @ 4.5 V  
30 V  
23 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D
Parameter  
Drain-to-Source Voltage  
Symbol Value Unit  
V
30  
$20  
14  
V
V
A
DSS  
Gate-to-Source Voltage  
V
GS  
G
Continuous Drain Current  
(Note 1 )  
T = 25°C  
I
D
A
Steady  
State  
T = 85°C  
A
10  
S
t v10 s T = 25°C  
23  
A
Power Dissipation (Note 1) Steady  
State  
P
2.2  
W
A
D
MARKING  
DIAGRAM  
T = 25°C  
A
t v10 s  
5.8  
9.1  
6.5  
0.9  
68  
D
Continuous Drain Current  
(Note 2)  
T = 25°C  
I
D
A
S
S
D
D
Steady  
State  
T = 85°C  
A
1
4122N  
AYWWG  
G
SO-8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Power Dissipation (Note 2)  
Pulsed Drain Current  
T = 25°C  
A
P
D
W
A
S
G
t = 10 ms  
p
I
DM  
D
Operating Junction and Storage Temperature  
T , T  
J
-55 to  
150  
°C  
stg  
4122N = Specific Device Code  
A
= Assembly Location  
= Year  
= Work Week  
Source Current (Body Diode)  
I
7.0  
A
S
Y
Single Pulse Drain-to-Source Avalanche Energy  
(V = 30 V, V = 10 V, I = 21 A, L = 1 mH,  
E
AS  
220  
mJ  
WW  
G
DD  
GS  
PK  
= Pb-Free Package  
R
G
= 25 W)  
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
ORDERING INFORMATION  
THERMAL RESISTANCE MAXIMUM RATINGS  
†
Device  
Package  
Shipping  
Parameter  
Symbol Value Unit  
NTMFS4122NT1G SO-8 FL 1500 Tape & Reel  
(Pb-Free)  
Junction-to-Ambient - Steady State (Note 1)  
Junction-to-Ambient - t v10 s (Note 1)  
Junction-to-Ambient - Steady State (Note 2)  
R
R
R
56.3  
21.5  
°C/W  
q
JA  
q
JA  
q
JA  
NTMFS4122NT3G SO-8 FL 5000 Tape & Reel  
(Pb-Free)  
141.6  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Surface mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces).  
2. Surface mounted on FR4 board using the minimum recommended pad size  
(Cu area = 0.0264 in sq).  
*For additional information on our Pb-Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
July, 2007 - Rev. 4  
1
Publication Order Number:  
NTMFS4122N/D  
 
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NTMFS4122NT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFS4701NT1G ONSEMI

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