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NTMFS4851NT3G

更新时间： 2024-09-24 05:54:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 134K
描述
Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL

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中文翻译

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NTMFS4851NT3G 技术参数

是否无铅：不含铅生命周期：End Of Life
零件包装代码：DFN包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.72
Is Samacsys：N外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：66 A最大漏极电流 (ID)：100 A
最大漏源导通电阻：0.0087 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：41.7 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTMFS4851NT3G 数据手册

 浏览型号NTMFS4851NT3G的Datasheet PDF文件第2页浏览型号NTMFS4851NT3G的Datasheet PDF文件第3页浏览型号NTMFS4851NT3G的Datasheet PDF文件第4页浏览型号NTMFS4851NT3G的Datasheet PDF文件第5页浏览型号NTMFS4851NT3G的Datasheet PDF文件第6页 
NTMFS4851N  
Power MOSFET  
30 V, 66 A, Single N−Channel, SO−8FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• Thermally Enhanced SO8 Package  
http://onsemi.com  
• These are Pb−Free Devices*  
V
R
DS(ON)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
5.9 mW @ 10 V  
8.7 mW @ 4.5 V  
• Refer to Application Note AND8195/D  
• CPU Power Delivery  
• DC−DC Converters  
30 V  
66 A  
• High Side Switching  
D (5,6)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Symbol  
Value  
Unit  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
V
30  
16  
15  
V
V
A
DSS  
G (4)  
V
GS  
Continuous Drain  
Current R  
T = 25°C  
I
D
A
q
JA  
S (1,2,3)  
N−CHANNEL MOSFET  
T = 85°C  
A
10.8  
2.16  
(Note 1)  
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
W
A
D
D
D
D
R
q
JA  
Continuous Drain  
T = 25°C  
A
I
24.3  
17.5  
5.67  
D
MARKING  
DIAGRAM  
Current R  
10 sec  
v
q
JA  
T = 85°C  
A
D
Power Dissipation  
T = 25°C  
A
P
W
A
R
t v 10 sec  
S
S
S
G
D
D
q
JA,  
Steady  
State  
1
4851N  
AYWWG  
G
Continuous Drain  
Current R  
T = 25°C  
A
I
D
9.5  
6.9  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
q
JA  
T = 85°C  
A
(Note 2)  
Power Dissipation  
(Note 2)  
D
T = 25°C  
A
P
0.87  
W
A
R
q
JA  
A
Y
= Assembly Location  
= Year  
= Work Week  
Continuous Drain  
Current R  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
D
66  
C
C
C
q
JC  
WW  
G
47.8  
41.7  
(Note 1)  
Power Dissipation  
(Note 1)  
= Pb−Free Package  
P
W
A
(Note: Microdot may be in either location)  
R
q
JC  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
132  
100  
ORDERING INFORMATION  
Current limited by package  
T = 25°C  
A
I
A
Dmaxpkg  
†
Device  
Package  
Shipping  
Operating Junction and Storage  
Temperature  
T ,  
−55 to  
+150  
°C  
J
T
NTMFS4851NT1G  
SO−8FL  
1500 /  
STG  
(Pb−Free)  
Tape & Reel  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
41.7  
6
A
S
dV/dt  
EAS  
V/ns  
mJ  
NTMFS4851NT3G  
SO−8FL  
(Pb−Free)  
5000 /  
Tape & Reel  
Single Pulse Drain−to−Source Avalanche  
Energy (V = 50 V, V = 10 V,  
109  
DD  
GS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
I = 27 A , L = 0.3 mH, R = 25 W)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
May, 2010 − Rev. 2  
NTMFS4851N/D  
123456

中文翻译

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NTMFS4851NT3G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFS4122NT1G ONSEMI

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