5秒后页面跳转
捷配首页

Datasheet > NTMFS4852N
NTMFS4852N PDF预览

NTMFS4852N

更新时间： 2024-09-24 06:00:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 136K
描述
Power MOSFET 30 V, 155 A, Single N−Channel, SO−8 FL

阅读下载

中文翻译

获取价格

NTMFS4852N 数据手册

 浏览型号NTMFS4852N的Datasheet PDF文件第2页浏览型号NTMFS4852N的Datasheet PDF文件第3页浏览型号NTMFS4852N的Datasheet PDF文件第4页浏览型号NTMFS4852N的Datasheet PDF文件第5页浏览型号NTMFS4852N的Datasheet PDF文件第6页浏览型号NTMFS4852N的Datasheet PDF文件第7页 
NTMFS4852N  
Advance Information  
Power MOSFET  
30 V, 155 A, Single N−Channel, SO−8 FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb−Free Device  
http://onsemi.com  
V
R
DS(ON)  
MAX  
I MAX  
D
Applications  
(BR)DSS  
• Refer to Application Note AND8195/D  
• CPU Power Delivery  
• DC−DC Converters  
2.1 mW @ 10 V  
3.1 mW @ 4.5 V  
30 V  
155 A  
• Low Side Switching  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
D (5,6)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
V
GS  
20  
V
G (4)  
Continuous Drain  
Current R  
T = 25°C  
I
D
25  
A
A
q
JA  
T = 85°C  
A
18  
(Note 1)  
Power Dissipation  
(Note 1)  
S (1,2,3)  
N−CHANNEL MOSFET  
T = 25°C  
A
P
2.31  
W
A
D
D
D
D
R
q
JA  
Continuous Drain  
T = 25°C  
A
I
40  
29  
D
Current R  
10 sec  
v
q
JA  
MARKING  
DIAGRAM  
T = 85°C  
A
Power Dissipation  
T = 25°C  
A
P
5.95  
W
A
D
R
t v 10 sec  
q
JA,  
Steady  
State  
S
S
S
G
D
D
Continuous Drain  
Current R  
T = 25°C  
A
I
16  
11  
D
1
4852N  
AYWWG  
G
q
JA  
T = 85°C  
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
(Note 2)  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
0.90  
W
A
D
R
q
JA  
Continuous Drain  
Current R  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
155  
112  
C
C
C
D
A
Y
= Assembly Location  
= Year  
= Work Week  
q
JC  
(Note 1)  
Power Dissipation  
(Note 1)  
WW  
G
P
86.2  
W
A
= Pb−Free Package  
R
q
JC  
(Note: Microdot may be in either location)  
Pulsed Drain  
Current  
t =10ms  
p
T = 25°C  
A
I
DM  
310  
100  
Current limited by package  
T = 25°C  
A
I
A
ORDERING INFORMATION  
Dmaxpkg  
Operating Junction and Storage  
Temperature  
T ,  
STG  
−55 to  
+150  
°C  
J
†
Device  
Package  
Shipping  
T
NTMFS4852NT1G  
SO−8FL  
(Pb−Free)  
1500 /  
Tape & Reel  
Source Current (Body Diode)  
Drain to Source dV/dt  
I
72  
6
A
S
dV/dt  
EAS  
V/ns  
mJ  
NTMFS4852NT3G  
SO−8FL  
(Pb−Free)  
5000 /  
Tape & Reel  
Single Pulse Drain−to−Source Avalanche  
Energy (V = 50 V, V = 10 V,  
360  
DD  
GS  
I = 49 A , L = 0.3 mH, R = 25 W)  
L
pk  
G
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
This document contains information on a new product. Specifications and information  
herein are subject to change without notice.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
July, 2009 − Rev. P1  
NTMFS4852N/D  
1234567

中文翻译

下载PDF

与NTMFS4852N相关器件

型号 品牌 获取价格 描述 数据表
NTMFS4852NT1G ONSEMI

获取价格

 		Power MOSFET 30 V, 155 A, Single N−Channel, SO−8 FL
NTMFS4852NT3G ONSEMI

获取价格

 		Power MOSFET 30 V, 155 A, Single N−Channel, SO−8 FL
NTMFS4854NS ONSEMI

获取价格

 		Single N−Channel Power MOSFET
NTMFS4854NST1G ONSEMI

获取价格

 		Single N−Channel Power MOSFET
NTMFS4854NST3G ONSEMI

获取价格

 		Single N−Channel Power MOSFET
NTMFS4897NF ONSEMI

获取价格

 		Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL
NTMFS4897NFT1G ONSEMI

获取价格

 		Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL
NTMFS4897NFT3G ONSEMI

获取价格

 		Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL
NTMFS4898NF ONSEMI

获取价格

 		Power MOSFET 30 V, 117 A, Single N−Channel, SO−8FL
NTMFS4898NF_10 ONSEMI

获取价格

 		Power MOSFET 30 V, 117 A, Single N−Channel, SO−8FL

与NTMFS4852N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证