Datasheet > NTMFS4120N

NTMFS4120N

更新时间： 2024-09-25 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	90K
描述
Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead

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NTMFS4120N 数据手册

NTMFS4120N

Power MOSFET

30 V, 31 A, Single N-Channel,

SO-8 Flat Lead

Features

•ꢀLow R

DS(on)

http://onsemi.com

•ꢀOptimized Gate Charge

•ꢀLow Inductance SO-8 Package

•ꢀThese are Pb-Free Devices

Applications

Max

(Note 1)

DS(on)

Typ

(BR)DSS

3.5 mW @ 10 V

4.2 mW @ 4.5 V

30 V

31 A

•ꢀNotebooks, Graphics Cards

•ꢀDC-DC Converters

•ꢀSynchronous Rectification

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain-to-Source Voltage

Symbol Value Unit

$20

DSS

Gate-to-Source Voltage

Continuous Drain Current

(Note 1 )

T = 25°C

Steady

State

T = 85°C

t v10 s T = 25°C

Power Dissipation (Note 1) Steady

State

2.2

MARKING

DIAGRAM

T = 25°C

t v10 s

6.9

Continuous Drain Current

(Note 2)

T = 25°C

Steady

State

4120N

AYWWG

T = 85°C

8.0

0.9

SO-8 FLAT LEAD

CASE 488AA

STYLE 1

Power Dissipation (Note 2)

Pulsed Drain Current

T = 25°C

t = 10 ms

Operating Junction and Storage Temperature

T , T

-55 to

150

°C

stg

4120N = Specific Device Code

= Assembly Location

= Year

= Work Week

Source Current (Body Diode)

7.0

Single Pulse Drain-to-Source Avalanche Energy

(V = 30 V, V = 10 V, I = 30 A,

450

DD GS

L = 1 mH, R = 25 W)

= Pb-Free Package

(Note: Microdot may be in either location)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

THERMAL RESISTANCE MAXIMUM RATINGS

†

Device

Package

Shipping

Parameter

Symbol Value Unit

Junction-to-Case - Steady State

1.7

55.8

°C/W

NTMFS4120NT1G SO-8 FL 1500 Tape & Reel

(Pb-Free)

Junction-to-Ambient - Steady State (Note 1)

Junction-to-Ambient - t v10 s (Note 1)

Junction-to-Ambient - Steady State (Note 2)

NTMFS4120NT3G SO-8 FL 5000 Tape & Reel

(Pb-Free)

139.1

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface mounted on FR4 board using the minimum recommended pad size

(Cu area = 1.0 in sq).

July, 2007 - Rev. 3

Publication Order Number:

NTMFS4120N/D

12 3 4 5 6

中文翻译

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与NTMFS4120N相关器件

型号	品牌	获取价格	描述	数据表
NTMFS4120NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead
NTMFS4120NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead
NTMFS4121N	ONSEMI	获取价格	Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead
NTMFS4121NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead
NTMFS4121NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead
NTMFS4122N	ONSEMI	获取价格	Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead
NTMFS4122NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead
NTMFS4122NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead
NTMFS4701N	ONSEMI	获取价格	Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package
NTMFS4701NR2	ONSEMI	获取价格	8000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 488AA-01, SO-8

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