DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, Logic Level,
SO-8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
0.49 mW @ 10 V
0.78 mW @ 4.5 V
40 V
455 A
40 V, 0.49 mW, 455 A
D (5−8)
NTMFS0D5N04XL
Features
• Low R
G (4)
to Minimize Conduction Loss
DS(on)
• Low Q with Soft Recovery to Minimize E Loss and Voltage
RR
RR
S (1,2,3)
N−CHANNEL MOSFET
Spike
• Low Q and Capacitance to Minimize Driving and Switching Loss
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
D
Typical Applications
• High Switching Frequency DC−DC Conversion
• Synchronous Rectification
S
S
S
D
D
DFNW5 (SO−8FL)
CASE 506FA
0D5N4L
AYWZZ
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
1
C
D
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
0D5N4L = Specific Device Code
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
455
322
194
97.3
2474
2474
A
C
D
Steady
Current R
(Note 2)
q
JC
State
T
C
Power Dissipation
(Note 2)
T
C
P
W
A
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Steady
State
R
q
JC
T
C
= 100°C
Pulsed Drain Current
I
DM
T = 25°C, t = 100 ms
A
p
Pulsed Sourced
Current (Body Diode)
I
SM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
STG
Source Current (Body Diode)
I
S
306
A
Single Pulse Drain−to−Source Avalanche
E
AS
1325
mJ
Energy (I
= 94 A)
Lpk
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. R
Thermal Resistance − Junction to Case Top = 20 °C/W.
q
JCT
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
June, 2023 − Rev. 3
NTMFS0D5N04XL/D