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NTMFS0D7N03CGT1G PDF预览

NTMFS0D7N03CGT1G

更新时间: 2024-09-25 11:15:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 214K
描述
MOSFET, Power, 30V N-Channel, SO8-FL

NTMFS0D7N03CGT1G 数据手册

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MOSFET - Power, Single  
N-Channel, SO8-FL  
30 V, 0.65 mW, 409 A  
NTMFS0D7N03CG  
Features  
Wide SOA to Improve Inrush Current Management  
Advanced Package (5x6mm) with Excellent Thermal Conduction  
www.onsemi.com  
Ultra Low R  
to Improve System Efficiency  
DS(on)  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
30 V  
0.65 mW @ 10 V  
409 A  
Applications  
Hot Swap Application  
Power Load Switch  
Battery Management and Protection  
D (58)  
G (4)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
30  
Unit  
V
S (1,2,3)  
NCHANNEL MOSFET  
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
T
= 25°C  
=100°C  
= 25°C  
I
409  
289  
187  
A
C
D
q
JC  
Steady  
(Note 2)  
MARKING  
DIAGRAMS  
D
C
State  
Power Dissipation  
T
C
P
W
A
D
R
(Note 2)  
q
JC  
S
D
D
DFN5 (SO8FL)  
CASE 506EZ  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
59  
42  
0D7NG  
AYWZZ  
S
S
q
JA  
T = 100°C  
A
Steady  
State  
(Notes 1, 2)  
G
1
Power Dissipation  
T = 25°C  
A
P
4.0  
W
D
D
R
(Notes 1, 2)  
q
JA  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
900  
155  
A
A
A
p
Source Current (Body Diode)  
I
S
Single Pulse DraintoSource Avalanche  
Energy (I = 40.8 A  
E
AS  
1080  
mJ  
)
pk  
L
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
°C  
°C  
J
STG  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
+175  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surfacemounted on FR4 board using 1 in pad, 2 oz Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
June, 2021 Rev. 6  
NTMFS0D7N03CG/D  
 

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