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NTMFS1D7N03CGT1G PDF预览

NTMFS1D7N03CGT1G

更新时间: 2023-09-03 20:38:45
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 218K
描述
MOSFET, Power, 30V N-Channel, SO8-FL

NTMFS1D7N03CGT1G 数据手册

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MOSFET - Power, Single  
N-Channel, SO8-FL  
30 V, 1.74 mW, 170 A  
NTMFS1D7N03CG  
Features  
Wide SOA to Improve Inrush Current Management  
Advanced Package (5x6 mm) with Excellent Thermal Conduction  
www.onsemi.com  
Ultra Low R  
to Improve System Efficiency  
DS(on)  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Compliant  
30 V  
1.74 mW @ 10 V  
170 A  
Typical Applications  
Hot Swap Application  
Power Load Switch  
Battery Management and Protection  
D (5)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G (4)  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
S (1,2,3)  
NCHANNEL MOSFET  
GatetoSource Voltage  
V
20  
V
GS  
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
170  
120  
87  
A
C
D
Current R  
(Note 2)  
q
JC  
T
C
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Note 2)  
T
C
P
W
A
D
R
q
JC  
D
Continuous Drain  
Current R (Note 1)  
T = 25°C  
A
I
35  
25  
1
D
S
S
S
G
D
D
q
JA  
Steady  
State  
T = 100°C  
A
DFN5  
(SO8FL)  
CASE 488AA  
STYLE 1  
1D7NG  
AYWZZ  
Power Dissipation R  
T = 25°C  
A
P
3.8  
900  
73  
W
A
q
D
JA  
Pulsed Drain Current  
Source Current (Body Diode)  
Single Pulse DraintoSource Avalanche  
T = 25°C, t = 10 ms  
I
DM  
A
p
D
I
A
S
1D7NG = Specific Device Code  
A
Y
= Assembly Location  
= Year  
E
128  
mJ  
AS  
Energy I = 50.6 A  
L
pk  
W
ZZ  
= Work Week  
= Lot Traceability  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
°C  
°C  
J
stg  
+175  
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8from case for 10 s)  
T
L
260  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surfacemounted on FR4 board using a 1 in , 2 oz. Cu pad.  
2. The entire application environment impacts the thermal resistance values shown.  
They are not constants and are only valid for the particular conditions noted.  
Actual continuous current will be limited by thermal & electromechanical  
application board design. R  
is determined by the user’s board design.  
q
CA  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
April, 2021 Rev. 3  
NTMFS1D7N03CG/D  
 

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