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NTMFS0D8N02P1ET1G

更新时间： 2024-09-25 11:14:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 231K
描述
MOSFET, Power, 25V Single N-Channel, SO-8FL

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NTMFS0D8N02P1ET1G 数据手册

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MOSFET - Power, Single  
N-Channel, SO8-FL  
25 V, 0.68 mW, 365 A  
NTMFS0D8N02P1E  
Features  
• Small Footprint (5x6mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Compliant  
0.68 mW @ 10 V  
0.80 mW @ 4.5 V  
25 V  
365 A  
Applications  
• DC−DC Converters  
• Power Load Switch  
• Notebook Battery Management  
D (5−8)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
V
V
DSS  
25  
G (4)  
Gate−to−Source Voltage  
V
GS  
+16/  
−12  
V
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain  
Current R  
T
= 25°C  
=85°C  
= 25°C  
I
365  
263  
139  
A
C
D
q
JC  
T
Steady  
(Note 1)  
C
C
State  
Power Dissipation  
T
P
W
A
D
D
D
MARKING  
DIAGRAMS  
D
R
(Note 1)  
q
JC  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
55  
40  
q
JA  
S
S
S
D
D
T = 85°C  
A
Steady  
State  
(Notes 1, 3)  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
2EFN  
AYWZZ  
Power Dissipation  
T = 25°C  
A
P
3.2  
W
A
R
(Notes 1, 3)  
q
JA  
G
1
D
Continuous Drain  
Current R  
T = 25°C  
A
I
D
30  
21  
q
JA  
2EFN = Specific Device Code  
T = 85°C  
A
Steady  
State  
(Notes 2, 3)  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
Power Dissipation  
T = 25°C  
A
P
0.93  
W
R
(Notes 2, 3)  
q
JA  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
762  
666  
A
A
p
Single Pulse Drain−to−Source Avalanche  
Energy (I = 115.4 A , L = 0.1 mH) (Note 4)  
E
AS  
mJ  
L
pk  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 6 of this data sheet.  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+150  
°C  
°C  
J
STG  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz Cu pad.  
2. Surface−mounted on FR4 board using minimum pad size, 2 oz Cu pad.  
3. The entire application environment impacts the thermal resistance values  
shown, they are not constants and are only valid for the particular conditions  
noted. Actual continuous current will be limited by thermal & electro−mechanical  
application board design. R  
is determined by the user’s board design.  
AS  
q
JC  
4. 100% UIS tested at L = 1 mH, I = 30.7 A.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
April, 2021 − Rev. 1  
NTMFS0D8N02P1E/D  
 
12345678

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