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NTMFS0D9N03CGT1G

更新时间： 2023-09-03 20:32:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 203K
描述
MOSFET，功率，30V，N 沟道，SO8FL

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NTMFS0D9N03CGT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, SO8-FL  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
30 V  
0.9 mW @ 10 V  
298 A  
30 V, 0.9 mW, 298 A  
D (5−8)  
NTMFS0D9N03CG  
G (4)  
Features  
• Advanced Package (5x6 mm) with Excellent Thermal Conduction  
S (1,2,3)  
• Ultra Low R  
to Improve System Efficiency  
DS(on)  
N−CHANNEL MOSFET  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
• Hot Swap Application  
• Power Load Switch  
• Battery Management and Protection  
1
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
MARKING DIAGRAM  
V
DSS  
D
V
GS  
20  
V
S
S
S
G
D
D
0D9NG  
AYWZZ  
Continuous Drain  
Current R  
Steady  
State  
T
T
= 25°C  
=100°C  
= 25°C  
I
D
298  
211  
144  
A
C
q
JC  
(Note 2)  
C
D
Power Dissipation  
T
C
P
D
W
A
R
(Note 2)  
q
JC  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
48  
34  
q
JA  
T = 100°C  
A
(Notes 1, 2)  
Power Dissipation  
T = 25°C  
P
3.8  
W
A
A
D
R
(Notes 1, 2)  
q
JA  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Pulsed Drain  
Current  
T = 25°C, t = 10 ms  
I
DM  
900  
A
p
Source Current (Body Diode)  
Single Pulse Drain−to−Source Avalanche  
I
120  
556  
A
S
E
AS  
mJ  
Energy (I = 29.2 A  
)
L
pk  
Operating Junction and Storage  
Temperature  
T ,  
STG  
−55 to  
°C  
°C  
J
T
+175  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
November, 2021 − Rev. 5  
NTMFS0D9N03CG/D  
 
1234567

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