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NTMFS010N10GTWG

更新时间： 2024-11-21 11:15:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 261K
描述
MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A

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NTMFS010N10GTWG 数据手册

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MOSFET - Power, Single  
N-Channel, PQFN8  
100 V, 10.8 mW, 83 A  
Product Preview  
NTMFS010N10G  
Features  
www.onsemi.com  
• Wide SOA for Linear Mode Operation  
• Low R  
to Minimize Conduction Loss  
DS(on)  
• High Peak UIS Current Capability for Ruggedness  
• Small Footprint (5x6 mm) for Compact Design  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
100 V  
10.8 mW @ 10 V  
83 A  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
N−Channel MOSFET  
• 48 V Hot Swap System, Load Switch, Soft Start, E−Fuse  
D(5,6,7,8)  
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)  
J
Parameter  
Drain−to−Source Breakdown Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
100  
20  
Unit  
V
V
(BR)DSS  
V
GS  
V
Continuous Drain Cur- Steady  
rent R (Note 2)  
State  
T
= 25°C  
= 100°C  
= 25°C  
= 100°C  
= 25°C  
= 100°C  
= 25°C  
= 100°C  
I
83  
A
C
D
D
q
JC  
T
C
I
58  
A
Power Dissipation  
(Note 2)  
T
C
P
P
I
150  
75  
W
W
A
D
D
D
R
D
q
JC  
T
C
D
D
Continuous Drain Cur- Steady  
rent R (Note 1, 2)  
State  
T
C
11  
D
G
S
S
S
q
JA  
T
C
I
D
8
A
Pin 1  
Bottom  
Power Dissipation  
(Note 1, 2)  
T
C
P
P
3
W
W
A
D
D
R
q
JA  
Top  
T
C
1.5  
1247  
PQFN8 5x6  
(Power 56)  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
p
CASE 483AE  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
MARKING DIAGRAM  
Source Current (Body Diode)  
I
125  
226  
A
S
Single Pulse Drain−to−Source Avalanche Ener-  
E
AS  
mJ  
gy (I = 38.8 A, L = 0.3 mH)  
AV  
10N10G  
AYWZZ  
Lead Temperature Soldering Reflow for Sol-  
dering Purposes (1/8” from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
August, 2021 − Rev. P0  
NTMFS010N10G/D  
 
1234567

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