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NTMFS0D55N03CGT1G PDF预览

NTMFS0D55N03CGT1G

更新时间： 2024-09-25 11:11:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 213K
描述
MOSFET, Power, 30V N-Channel, SO8-FL

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NTMFS0D55N03CGT1G 数据手册

 浏览型号NTMFS0D55N03CGT1G的Datasheet PDF文件第2页浏览型号NTMFS0D55N03CGT1G的Datasheet PDF文件第3页浏览型号NTMFS0D55N03CGT1G的Datasheet PDF文件第4页浏览型号NTMFS0D55N03CGT1G的Datasheet PDF文件第5页浏览型号NTMFS0D55N03CGT1G的Datasheet PDF文件第6页浏览型号NTMFS0D55N03CGT1G的Datasheet PDF文件第7页 
MOSFET - Power, Single  
N-Channel, SO8-FL  
30 V, 0.58 mW, 462 A  
NTMFS0D55N03CG  
Features  
• Wide SOA to Improve Inrush Current Management  
• Advanced Package (5x6mm) with Excellent Thermal Conduction  
www.onsemi.com  
• Ultra Low R  
to Improve System Efficiency  
DS(on)  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
30 V  
0.58 mW @ 10 V  
462 A  
Applications  
• Hot Swap Application  
• Power Load Switch  
• Battery Management and Protection  
D (5−8)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
G (4)  
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
S (1,2,3)  
N−CHANNEL MOSFET  
V
GS  
20  
V
Continuous Drain  
Current R  
T
T
= 25°C  
=100°C  
= 25°C  
I
D
462  
326  
199  
A
C
q
JC  
Steady  
State  
(Note 3)  
C
MARKING  
DIAGRAMS  
D
Power Dissipation  
T
C
P
W
A
D
D
D
R
(Note 3)  
q
JC  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
65  
46  
S
S
S
D
D
DFN5 (SO−8FL)  
CASE 506EZ  
q
JA  
0D55NG  
AYWZZ  
T = 100°C  
A
Steady  
State  
(Notes 1, 3)  
Power Dissipation  
T = 25°C  
A
P
3.9  
W
A
G
1
R
(Notes 1, 3)  
q
JA  
D
Continuous Drain  
Current R  
T = 25°C  
A
I
D
35  
25  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
q
JA  
T = 100°C  
A
Steady  
State  
(Notes 2, 3)  
Power Dissipation  
T = 25°C  
A
P
1.1  
W
A
R
(Notes 2, 3)  
q
JA  
Pulsed Drain  
Current  
T = 25°C, t = 10 ms  
A
I
900  
p
DM  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Source Current (Body Diode)  
Single Pulse Drain−to−Source Avalanche  
I
S
166  
A
E
AS  
1346  
mJ  
Energy (I = 45.5 A  
)
L
pk  
Operating Junction and Storage  
Temperature Range  
T ,  
STG  
−55 to  
°C  
°C  
J
T
+175  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface−mounted on FR4 board using 1 in pad, 2 oz Cu pad.  
2. Surface−mounted on FR4 board using minimum pad, 2 oz Cu pad.  
3. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
June, 2021 − Rev. 5  
NTMFS0D55N03CG/D  
 
1234567

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