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NTMFS020N06CT1G

更新时间： 2024-09-25 11:15:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 222K
描述
Power MOSFET Power, N-Channel, SINGLE SO8FL, 60 V, 19.6 mΩ, 28 A

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NTMFS020N06CT1G 数据手册

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MOSFET- Power, Single  
N-Channel, SO8FL  
60 V, 19.6 mW, 28 A  
NTMFS020N06C  
Features  
• Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Compliant  
60 V  
19.6 mW @ 10 V  
28 A  
Applications  
• Power Tools, Battery Operated Vacuums  
• UAV/Drones, Material Handling  
• BMS/Storage, Home Automation  
D (5−8)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
G (4)  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
V
DSS  
60  
20  
28  
V
V
A
S (1,2,3)  
N−CHANNEL MOSFET  
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
T
= 25°C  
I
D
C
Steady  
State  
Current R  
q
JC  
T
C
= 100°C  
19  
(Notes 1, 3)  
MARKING  
DIAGRAM  
D
Power Dissipation  
T
= 25°C  
P
31  
15  
9
W
A
C
D
Steady  
State  
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
T = 25°C  
A
I
D
Steady  
State  
S
D
D
Current R  
q
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
JA  
20N06C  
AYWZZ  
T = 100°C  
A
6
S
S
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
A
P
D
3.4  
1.7  
181  
W
Steady  
State  
G
R
(Notes 1, 2)  
q
1
JA  
T = 100°C  
A
D
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
A
A
p
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
Operating Junction and Storage Temperature T , T  
−55 to  
+175  
°C  
J
STG  
Range  
Source Current (Body Diode)  
I
S
25  
15  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 5.6 A  
)
L
pk  
ORDERING INFORMATION  
Lead Temperature Soldering Reflow for  
Soldering Purposes (1/8″ from case for 10 s)  
T
260  
°C  
L
†
Device  
Package  
Shipping  
1500 /  
Tape & Reel  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NTMFS020N06CT1G SO−8 FL  
(Pb−Free)  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Value  
4.8  
Unit  
Junction−to−Case – Steady State (Note 2)  
Junction−to−Ambient – Steady State (Note 2)  
R
°C/W  
q
JC  
R
43.2  
q
JA  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
January, 2020 − Rev. 0  
NTMFS020N06C/D  
 
1234567

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