MOSFET - Power, Single
N-Channel
100 V, 12.2 mW, 54 A
NTMFS015N10MCL
Features
www.onsemi.com
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• Primary DC−DC MOSFET
12.2 mW @ 10 V
18.3 mW @ 4.5 V
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
100 V
54 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
D (5,6)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
G (4)
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
54
A
S (1,2,3)
N−CHANNEL MOSFET
C
D
q
JC
T
C
38
Steady
State
(Notes 1, 3)
Power Dissipation
T
C
P
79
W
A
D
R
(Note 1)
q
JC
MARKING
DIAGRAM
Continuous Drain
Current R
T = 25°C
A
I
D
10.5
q
JA
D
Steady
State
(Notes 1, 2, 3)
1
S
S
S
G
D
D
Power Dissipation
T = 25°C
A
P
3.0
W
D
XXXXXX
AYWZZ
DFN5
R
(Notes 1, 2)
q
JA
CASE 488AA
STYLE 1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
423
A
A
p
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
XXXXXX = Specific Device Code
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Single Pulse Drain−to−Source Avalanche
E
54
mJ
AS
Energy (L = 3 mH, I = 6 A)
AS
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 3 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.9
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
50
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
April, 2020 − Rev. 2
NTMFS015N10MCL/D