Datasheet > NTMFS015N10MCLT1G

NTMFS015N10MCLT1G

更新时间： 2024-09-25 11:14:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	257K
描述
Single N-Channel Power MOSFET 100V, 54A, 12.2mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMFS015N10MCLT1G 数据手册

浏览型号NTMFS015N10MCLT1G的Datasheet PDF文件第2页

浏览型号NTMFS015N10MCLT1G的Datasheet PDF文件第3页

浏览型号NTMFS015N10MCLT1G的Datasheet PDF文件第4页

浏览型号NTMFS015N10MCLT1G的Datasheet PDF文件第5页

浏览型号NTMFS015N10MCLT1G的Datasheet PDF文件第6页

浏览型号NTMFS015N10MCLT1G的Datasheet PDF文件第7页

MOSFET - Power, Single

N-Channel

100 V, 12.2 mW, 54 A

NTMFS015N10MCL

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• Primary DC−DC MOSFET

12.2 mW @ 10 V

18.3 mW @ 4.5 V

• Synchronous Rectifier in DC−DC and AC−DC

• Motor Drive

100 V

54 A

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

D (5,6)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DSS

G (4)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

S (1,2,3)

N−CHANNEL MOSFET

Steady

State

(Notes 1, 3)

Power Dissipation

(Note 1)

MARKING

DIAGRAM

Continuous Drain

Current R

T = 25°C

10.5

Steady

State

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

3.0

XXXXXX

AYWZZ

DFN5

(Notes 1, 2)

CASE 488AA

STYLE 1

Pulsed Drain Current

T = 25°C, t = 10 ms

423

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

XXXXXX = Specific Device Code

= Assembly Location

= Year

= Work Week

= Lot Traceability

Single Pulse Drain−to−Source Avalanche

Energy (L = 3 mH, I = 6 A)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 3 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

1.9

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

April, 2020 − Rev. 2

NTMFS015N10MCL/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NTMFS015N10MCLT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFS015N15MC	ONSEMI	获取价格	Power MOSFET, 150V Single N channel 61A, 14m Ohm in Power56 package
NTMFS020N06CT1G	ONSEMI	获取价格	Power MOSFET Power, N-Channel, SINGLE SO8FL,
NTMFS022N15MC	ONSEMI	获取价格	Power MOSFET, 150V Single N channel 41.9A, 22m Ohm in Power56 package
NTMFS034N15MC	ONSEMI	获取价格	Power MOSFET, 150V Single N channel 31A, 31m Ohm in Power56 package
NTMFS08N003C	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，147A，3.1mΩ
NTMFS08N004C	ONSEMI	获取价格	N‐Channel Shielded Gate PowerTrench® MOSFET 8
NTMFS08N2D5C	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，166A，2.7mΩ
NTMFS0D55N03CGT1G	ONSEMI	获取价格	MOSFET, Power, 30V N-Channel, SO8-FL
NTMFS0D5N03CT1G	ONSEMI	获取价格	MOSFET, Power, Single N-Channel, 30V, SO-8FL
NTMFS0D5N04XLT1G	ONSEMI	获取价格	Power MOSFET, Single, N-Channel, 40V, 0.49mΩ,

与NTMFS015N10MCLT1G相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

6
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

11
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFS015N10MCLT1G

NTMFS015N10MCLT1G 数据手册

与NTMFS015N10MCLT1G相关器件

与NTMFS015N10MCLT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFS015N10MCLT1G

NTMFS015N10MCLT1G 数据手册

与NTMFS015N10MCLT1G相关器件

与NTMFS015N10MCLT1G相关文章

您还可以找

您在本页遇到什么问题？