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NTMFS006N12MCT1G

更新时间： 2023-09-03 20:33:49
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 227K
描述
Power MOSFET, 120V Single N channel 93A, 6m Ohm in Power56 package

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NTMFS006N12MCT1G 数据手册

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MOSFET - Power, Single  
N-Channel  
120 V, 6.0 mW, 93 A  
NTMFS006N12MC  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• Soft Body Diode Reduces Voltage Ringing  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
6.0 mW @ 10 V  
13 mW @ 6.0 V  
120 V  
93 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
120  
20  
Unit  
V
D (5)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
93  
A
C
D
G (4)  
q
JC  
T
C
58  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
104  
41  
W
A
D
S (1,2,3)  
N−CHANNEL MOSFET  
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
15  
q
JA  
T = 100°C  
A
9
(Notes 1, 2, 3)  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
2.7  
1.1  
522  
W
D
R
(Notes 1, 2)  
q
JA  
D
T = 100°C  
A
1
S
S
S
G
D
D
Pulsed Drain Current  
T = 25°C, t = 100 ms  
I
DM  
A
A
p
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
06N12C  
AYWZZ  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+ 150  
°C  
J
stg  
D
Source Current (Body Diode)  
I
86  
A
S
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Single Pulse Drain−to−Source Avalanche  
E
120  
mJ  
AS  
Energy (I  
= 49A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
1.2  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
45  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
October, 2020 − Rev. 0  
NTMFS006N12MC/D  
 
1234567

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