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NTMFS002N10MCLT1G

更新时间： 2023-09-03 20:33:12
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 124K
描述
MOSFET - Power, Single, N-Channel 100 V, 2.8 mΩ, 175A

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NTMFS002N10MCLT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
100 V, 2.8 mW, 175 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
2.8 mW @ 10 V  
3.8 mW @ 4.5 V  
100 V  
175 A  
NTMFS002N10MCL  
D (5,6)  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G (4)  
G
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free  
and are RoHS Compliant  
S (1,2,3)  
N−CHANNEL MOSFET  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
20  
Unit  
V
MARKING  
DIAGRAM  
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
D
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
175  
123  
189  
94  
A
S
S
S
G
D
D
1
C
D
Current R  
(Note 1)  
XXXXXX  
AYWZZ  
q
JC  
T
C
DFN5  
(SO−8FL)  
CASE 506EZ  
Steady  
State  
Power Dissipation  
(Note 1)  
T
C
P
W
A
D
R
D
q
JC  
T
C
= 100°C  
A
Y
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
22  
q
JA  
W
ZZ  
T = 100°C  
A
15  
(Notes 1, 2)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
1.5  
1536  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
ORDERING INFORMATION  
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
Device  
NTMFS002N10MCLT1G  
Package  
Shipping†  
+175  
DFN5  
1500 /  
Source Current (Body Diode)  
I
S
145  
328  
A
(Pb−Free) Tape & Reel  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Energy (I  
= 40 A)  
L(pk)  
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Value  
0.79  
50  
Unit  
Junction−to−Case − Steady State (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
October, 2021 − Rev. 1  
NTMFS002N10MCL/D  
 
1234567

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