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NTMFD5C466NT1G

更新时间： 2024-11-21 11:15:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 215K
描述
Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 mΩ

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NTMFD5C466NT1G 数据手册

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NTMFD5C466N  
Power MOSFET  
40 V, 8.1 mW, 49 A, Dual N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• These Devices are Pb−Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
40 V  
8.1 mꢂ @ 10 V  
49 A  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
I
49  
A
C
D
Dual N−Channel  
ꢀ
JC  
T
C
= 100°C  
35  
(Notes 1, 2, 3)  
Steady  
State  
D1  
D2  
Power Dissipation  
T
C
= 25°C  
P
38  
19  
14  
W
A
D
R
(Notes 1, 2)  
ꢀ
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
G1  
G2  
ꢀ
JA  
T = 100°C  
A
10  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.0  
1.5  
169  
W
S1  
S2  
D
R
(Notes 1 & 2)  
ꢀ
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ꢁ s  
I
DM  
A
A
p
MARKING  
DIAGRAM  
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
+ 175  
D1 D1  
Source Current (Body Diode)  
I
S
31  
72  
A
S1  
G1  
S2  
G2  
D1  
1
D1  
D2  
D2  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
5C466N  
AYWZZ  
DFN8 5x6  
(SO8FL)  
CASE 506BT  
Energy (T = 25°C, I  
= 3 A)  
J
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
D2 D2  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
5C466N = Specific Device Code  
A
= Assembly Location  
= Year  
Y
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
4
°C/W  
ꢀ
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
49  
ꢀ
JA  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
2
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
October, 2018 − Rev. 0  
NTMFD5C466N/D  
 
1234567

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