Datasheet > NTMFD5C466NT1G

NTMFD5C466NT1G

更新时间： 2023-09-03 20:37:44

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	215K
描述
Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 mΩ

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NTMFD5C466NT1G 数据手册

NTMFD5C466N

Power MOSFET

40 V, 8.1 mW, 49 A, Dual N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MAX

I MAX

(BR)DSS

DS(ON)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

40 V

8.1 mꢂ @ 10 V

49 A

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

Dual N−Channel

ꢀ

= 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

= 25°C

(Notes 1, 2)

ꢀ

= 100°C

Continuous Drain

Current R

T = 25°C

ꢀ

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.0

1.5

169

(Notes 1 & 2)

ꢀ

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ꢁ s

MARKING

DIAGRAM

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

+ 175

D1 D1

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

5C466N

AYWZZ

DFN8 5x6

(SO8FL)

CASE 506BT

Energy (T = 25°C, I

= 3 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

D2 D2

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

5C466N = Specific Device Code

= Assembly Location

= Year

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

°C/W

ꢀ

Junction−to−Ambient − Steady State (Note 2)

ꢀ

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

October, 2018 − Rev. 0

NTMFD5C466N/D

12 3 4 5 6 7

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与NTMFD5C466NT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFD5C470NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 40V, 36A, 11.5mΩ
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NTMFD5C672NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ
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NTMFD5C680NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，26A，28mΩ
NTMFD6H840NLT1G	ONSEMI	获取价格	Power Field-Effect Transistor
NTMFD6H846NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80V, 31A, 15mΩ
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