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NTMFD5C672NLT1G

更新时间： 2023-09-03 20:28:10
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 227K
描述
双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ

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NTMFD5C672NLT1G 数据手册

 浏览型号NTMFD5C672NLT1G的Datasheet PDF文件第2页浏览型号NTMFD5C672NLT1G的Datasheet PDF文件第3页浏览型号NTMFD5C672NLT1G的Datasheet PDF文件第4页浏览型号NTMFD5C672NLT1G的Datasheet PDF文件第5页浏览型号NTMFD5C672NLT1G的Datasheet PDF文件第6页浏览型号NTMFD5C672NLT1G的Datasheet PDF文件第7页 
NTMFD5C672NL  
MOSFET – Power, Dual,  
N-Channel  
60 V, 11.9 mW, 49 A  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
11.9 mW @ 10 V  
16.8 mW @ 4.5 V  
60 V  
Compliant  
49 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
Dual N−Channel  
V
DSS  
D1  
D2  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
49  
A
C
D
q
JC  
T
C
32  
(Notes 1, 2, 3)  
G1  
G2  
Steady  
State  
Power Dissipation  
T
C
P
45  
W
A
D
R
(Notes 1, 2)  
q
JC  
S1  
S2  
T
C
= 100°C  
22  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
12  
q
JA  
T = 100°C  
A
8.0  
3.1  
1.5  
146  
(Notes 1, 2, 3)  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1 & 2)  
q
JA  
D1 D1  
T = 100°C  
A
S1  
G1  
S2  
G2  
D1  
1
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D1  
D2  
D2  
XXXXXX  
AYWZZ  
DFN8 5x6  
(SO8FL)  
CASE 506BT  
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
+ 175  
D2 D2  
Source Current (Body Diode)  
I
S
49  
66  
A
A
Y
= Assembly Location  
= Year  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 2 A)  
L(pk)  
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.55  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
49.8  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2019 − Rev. 0  
NTMFD5C672NL/D  
 
1234567

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