NTMFD5C650NL
MOSFET – Power, Dual,
N-Channel
60 V, 4.2 mW, 111 A
Features
www.onsemi.com
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
4.2 mW @ 10 V
5.8 mW @ 4.5 V
60 V
Compliant
111 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
Dual N−Channel
V
DSS
D1
D2
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
111
88
A
C
D
q
JC
T
C
(Notes 1, 2, 3)
G1
G2
Steady
State
Power Dissipation
T
C
P
125
62
W
A
D
R
(Notes 1, 2)
q
JC
S1
S2
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
21
q
JA
T = 100°C
A
15
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.5
1.8
502
W
D
R
(Notes 1 & 2)
q
JA
D1 D1
T = 100°C
A
S1
G1
S2
G2
D1
1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
D1
D2
D2
XXXXXX
AYWZZ
DFN8 5x6
(SO8FL)
CASE 506BT
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
+ 175
D2 D2
Source Current (Body Diode)
I
S
91
A
A
Y
= Assembly Location
= Year
Single Pulse Drain−to−Source Avalanche
E
AS
186
mJ
Energy (I
= 6 A)
L(pk)
W
ZZ
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.37
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
46.9
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2019 − Rev. P3
NTMFD5C650NL/D