Datasheet > NTMFD5C462NLT1G

NTMFD5C462NLT1G

更新时间： 2024-11-21 11:14:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	215K
描述
Power MOSFET 40V, 84A, 4.7 mOhm, Dual N-Channel, SO8-FL, Logic Level.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTMFD5C462NLT1G 数据手册

NTMFD5C462NL

Power MOSFET

40 V, 4.7 mW, 84 A, Dual N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

4.7 mW @ 10 V

7.7 mW @ 4.5 V

40 V

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

84 A

DSS

Gate−to−Source Voltage

Dual N−Channel

Continuous Drain

= 25°C

= 100°C

= 25°C

Current R

(Notes 1, 2, 3)

Steady

State

Power Dissipation

(Notes 1, 2)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.0

2.1

311

(Notes 1 & 2)

T = 100°C

MARKING

DIAGRAM

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

D1 D1

Source Current (Body Diode)

XXXXXX

AYWZZ

DFN8 5x6

(SO8FL)

CASE 506BT

Single Pulse Drain−to−Source Avalanche

174

Energy (T = 25°C, I

= 5 A)

L(pk)

D2 D2

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

2.25

Unit

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

47.3

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

August, 2017 − Rev. P3

NTMFD5C462NL/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTMFD5C462NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFD5C466NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 40V, 52A, 7.4mΩ
NTMFD5C466NT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 m
NTMFD5C470NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 40V, 36A, 11.5mΩ
NTMFD5C650NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，111A，4.2mΩ
NTMFD5C672NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ
NTMFD5C674NLT1G	ONSEMI	获取价格	功率 MOSFET，双 N 沟道，60V，42A，14.4 mΩ
NTMFD5C680NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，26A，28mΩ
NTMFD6H840NLT1G	ONSEMI	获取价格	Power Field-Effect Transistor
NTMFD6H846NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80V, 31A, 15mΩ
NTMFS002N10MCLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel 100 V, 2.8

与NTMFD5C462NLT1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFD5C462NLT1G

NTMFD5C462NLT1G 数据手册

与NTMFD5C462NLT1G相关器件

与NTMFD5C462NLT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTMFD5C462NLT1G

NTMFD5C462NLT1G 数据手册

与NTMFD5C462NLT1G相关器件

与NTMFD5C462NLT1G相关文章

您还可以找

您在本页遇到什么问题？