Datasheet > NTMFD5C466NLT1G

NTMFD5C466NLT1G

更新时间： 2023-09-03 20:34:52

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	227K
描述
Dual N-Channel Power MOSFET 40V, 52A, 7.4mΩ

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NTMFD5C466NLT1G 数据手册

NTMFD5C466NL

MOSFET – Power, Dual,

N-Channel

40 V, 7.4 mW, 52 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

7.4 mW @ 10 V

40 V

Compliant

52 A

12.6 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

Dual N−Channel

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

(Notes 1, 2)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

MARKING

DIAGRAM

Power Dissipation

T = 25°C

3.0

1.5

177

(Notes 1 & 2)

D1 D1

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

XXXXXX

AYWZZ

DFN8 5x6

(SO8FL)

CASE 506BT

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

+ 175

D2 D2

Source Current (Body Diode)

= Assembly Location

= Year

Single Pulse Drain−to−Source Avalanche

Energy (I

= 3 A)

L(pk)

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

May, 2019 − Rev. P4

NTMFD5C466NL/D

12 3 4 5 6 7

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与NTMFD5C466NLT1G相关器件

型号	品牌	获取价格	描述	数据表
NTMFD5C466NT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 m
NTMFD5C470NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 40V, 36A, 11.5mΩ
NTMFD5C650NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，111A，4.2mΩ
NTMFD5C672NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ
NTMFD5C674NLT1G	ONSEMI	获取价格	功率 MOSFET，双 N 沟道，60V，42A，14.4 mΩ
NTMFD5C680NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，26A，28mΩ
NTMFD6H840NLT1G	ONSEMI	获取价格	Power Field-Effect Transistor
NTMFD6H846NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80V, 31A, 15mΩ
NTMFS002N10MCLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel 100 V, 2.8
NTMFS002P03P8ZT1G	ONSEMI	获取价格	MOSFET, Power -30V P-Channel, SO-8FL

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