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NTMFD5877NLT1G

更新时间： 2023-09-03 20:32:37
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 220K
描述
功率 MOSFET，双 N 沟道，逻辑电平，60 V，17 A，39 mΩ

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NTMFD5877NLT1G 数据手册

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NTMFD5877NL  
MOSFET – Power, Dual,  
N-Channel, Logic Level,  
Dual SO8FL  
60 V, 39 mW, 17 A  
www.onsemi.com  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Small Footprint (5x6 mm) for Compact Design  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
39 mW @ 10 V  
60 mW @ 4.5 V  
60 V  
17 A  
Dual N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D1  
D2  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
"20  
17  
V
GS  
G1  
G2  
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
S1  
S2  
T
mb  
12  
2, 3, 4)  
Steady  
State  
Power Dissipation  
T
mb  
P
23  
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
MARKING DIAGRAM  
T
mb  
= 100°C  
12  
D1 D1  
Continuous Drain Cur-  
T = 25°C  
I
6
A
D
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
rent R  
3, 4)  
(Notes 1 &  
q
JA  
1
T = 100°C  
A
5
5877NL  
AYWZZ  
Steady  
State  
DFN8 5x6  
(SO8FL)  
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
3.2  
1.6  
74  
W
A
D
R
q
JA  
CASE 506BT  
D2 D2  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
A
A
p
DM  
5877NL = Specific Device Code  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
+175  
Source Current (Body Diode)  
I
S
19  
A
Single Pulse Drain−  
to−Source Avalanche  
(I  
= 14.5 A, L =  
E
AS  
10.5  
mJ  
L(pk)  
0.1 mH)  
Energy (T = 25°C,  
J
ORDERING INFORMATION  
(I = 6.3 A, L =  
40  
V
= 24 V, V  
=
L(pk)  
DD  
GS  
2 mH)  
10 V, R = 25 W)  
†
G
Device  
NTMFD5877NLT1G  
Package  
Shipping  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Note 2, 3)  
R
6.5  
°C/W  
Y
J−mb  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
May, 2019 − Rev. 0  
NTMFD5877NL/D  
 
12345678

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