Datasheet > NTMFD4C86N

NTMFD4C86N

更新时间： 2024-01-08 09:10:41

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	133K
描述
Dual N-Channel SO8FL

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中文翻译

获取价格

数据手册

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NTMFD4C86N 数据手册

NTMFD4C86N

PowerPhase, Dual

N-Channel SO8FL

30 V, High Side 20 A / Low Side 32 A

Features

• Co−Packaged Power Stage Solution to Minimize Board Space

• Minimized Parasitic Inductances

www.onsemi.com

• Optimized Devices to Reduce Power Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(on)

5.4 mW @ 10 V

8.1 mW @ 4.5 V

2.6 mW @ 10 V

3.4 mW @ 4.5 V

Q1 Top FET

30 V

20 A

32 A

Applications

Q2 Bottom

FET

• DC−DC Converters

• System Voltage Rails

• Point of Load

30 V

(3, 4, 9)

(1) G1

(2) S1

SW (5, 6, 7)

(8) G2

S2 (10)

PIN CONNECTIONS

Figure 1. Typical Application Circuit

D1 4

D1 3

5 SW

6 SW

100

S1 2

G1 1

7 SW

8 G2

(Bottom View)

MARKING

DIAGRAM

= 12 V

DFN8

CASE 506CR

= 1.2 V

OUT

4C86N

AYWZZ

= 5 V

= 300 kHz

T = 25°C

4C86N = Specific Device Code

LOAD CURRENT (A)

= Assembly Location

= Year

= Work Week

= Lot Traceability

Figure 2. Typical Efficiency Performance

POWERPHASEGEVB Evaluation Board

ORDERING INFORMATION

See detailed ordering and shipping information on page 10 of

this data sheet.

Publication Order Number:

July, 2015 − Rev. 1

NTMFD4C86N/D

12 3 4 5 6 7...12

中文翻译

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