是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | not_compliant | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 26.6 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3.51 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTMFD4C88NT1G | ONSEMI |
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Power MOSFET 30V 20A High Side 24A Low Side 5.4mOhm Dual N-Channel SO-8FL, DFN8 5x6, 1.27P |
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NTMFD4C88NT3G | ONSEMI |
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Power MOSFET 30V 20A High Side 24A Low Side 5.4mOhm Dual N-Channel SO-8FL, DFN8 5x6, 1.27P |
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NTMFD5877NLT1G | ONSEMI |
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功率 MOSFET,双 N 沟道,逻辑电平,60 V,17 A,39 mΩ |
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NTMFD5C446NLT1G | ONSEMI |
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Dual N-Channel Power MOSFET 40 V, 145A, 2.65m |
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NTMFD5C462NLT1G | ONSEMI |
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Power MOSFET 40V, 84A, 4.7 mOhm, Dual N-Channel, SO8-FL, Logic Level. |
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NTMFD5C466NLT1G | ONSEMI |
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Dual N-Channel Power MOSFET 40V, 52A, 7.4mΩ |
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NTMFD5C466NT1G | ONSEMI |
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Dual N-Channel Power MOSFET 40 V, 46 A, 8.1 m |
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NTMFD5C470NLT1G | ONSEMI |
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Dual N-Channel Power MOSFET 40V, 36A, 11.5mΩ |
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NTMFD5C650NLT1G | ONSEMI |
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双 N 沟道,功率 MOSFET,60V,111A,4.2mΩ |
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NTMFD5C672NLT1G | ONSEMI |
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双 N 沟道,功率 MOSFET,60V,49A,11.9mΩ |
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