Datasheet > NTMFD4C85N

NTMFD4C85N

更新时间： 2024-11-21 01:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	134K
描述
N-Channel SO8FL

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中文翻译

获取价格

数据手册

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NTMFD4C85N 数据手册

NTMFD4C85N

PowerPhase, Dual

N-Channel SO8FL

30 V, High Side 25 A / Low Side 49 A

Features

• Co−Packaged Power Stage Solution to Minimize Board Space

• Minimized Parasitic Inductances

www.onsemi.com

• Optimized Devices to Reduce Power Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

(BR)DSS

DS(ON)

3.0 mW @ 10 V

4.3 mW @ 4.5 V

0.8 mW @ 10 V

1.2 mW @ 4.5 V

Q1 Top FET

30 V

25 A

49 A

Applications

Q2 Bottom FET

30 V

• DC−DC Converters

• System Voltage Rails

• Point of Load

(3, 4, 9)

(1) G1

(2) S1

SW (5, 6, 7)

(8) G2

S2 (10)

Figure 1. Typical Application Circuit

PIN CONNECTIONS

D1 4

D1 3

5 SW

100

6 SW

S1 2

G1 1

7 SW

8 G2

(Bottom View)

MARKING

DIAGRAM

= 12 V

= 1.2 V

OUT

DFN8

CASE 506CR

4C85N

AYWZZ

= 5 V

= 300 kHz

T = 25°C

4C85N = Specific Device Code

LOAD CURRENT (A)

= Assembly Location

= Year

= Work Week

= Lot Traceability

Figure 2. Typical Efficiency Performance

POWERPHASEGEVB Evaluation Board

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 10 of this data sheet.

Publication Order Number:

August, 2015 − Rev. 1

NTMFD4C85N/D

12 3 4 5 6 7...12

中文翻译

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