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NTMFD4C85NT3G

更新时间: 2024-11-25 01:11:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 134K
描述
N-Channel SO8FL

NTMFD4C85NT3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:DFN, SOP-8
Reach Compliance Code:not_compliant风险等级:5.83
Base Number Matches:1

NTMFD4C85NT3G 数据手册

 浏览型号NTMFD4C85NT3G的Datasheet PDF文件第2页浏览型号NTMFD4C85NT3G的Datasheet PDF文件第3页浏览型号NTMFD4C85NT3G的Datasheet PDF文件第4页浏览型号NTMFD4C85NT3G的Datasheet PDF文件第5页浏览型号NTMFD4C85NT3G的Datasheet PDF文件第6页浏览型号NTMFD4C85NT3G的Datasheet PDF文件第7页 
NTMFD4C85N  
PowerPhase, Dual  
N-Channel SO8FL  
30 V, High Side 25 A / Low Side 49 A  
Features  
Co−Packaged Power Stage Solution to Minimize Board Space  
Minimized Parasitic Inductances  
www.onsemi.com  
Optimized Devices to Reduce Power Losses  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I
D
MAX  
(BR)DSS  
DS(ON)  
3.0 mW @ 10 V  
4.3 mW @ 4.5 V  
0.8 mW @ 10 V  
1.2 mW @ 4.5 V  
Q1 Top FET  
30 V  
25 A  
49 A  
Applications  
Q2 Bottom FET  
30 V  
DC−DC Converters  
System Voltage Rails  
Point of Load  
D1  
(3, 4, 9)  
(1) G1  
(2) S1  
SW (5, 6, 7)  
(8) G2  
S2 (10)  
Figure 1. Typical Application Circuit  
PIN CONNECTIONS  
D1 4  
D1 3  
5 SW  
100  
9
D1  
10  
S2  
6 SW  
95  
90  
S1 2  
G1 1  
7 SW  
8 G2  
(Bottom View)  
85  
80  
MARKING  
DIAGRAM  
V
V
V
= 12 V  
IN  
1
= 1.2 V  
OUT  
DFN8  
CASE 506CR  
4C85N  
AYWZZ  
= 5 V  
GS  
75  
70  
F
SW  
= 300 kHz  
1
T = 25°C  
A
0
5
10  
15  
20  
25  
30  
4C85N = Specific Device Code  
LOAD CURRENT (A)  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Figure 2. Typical Efficiency Performance  
POWERPHASEGEVB Evaluation Board  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
August, 2015 − Rev. 1  
NTMFD4C85N/D  

NTMFD4C85NT3G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFD4C85NT1G ONSEMI

完全替代

N-Channel SO8FL

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