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NTMFD4C85NT1G PDF预览

NTMFD4C85NT1G

更新时间: 2024-11-21 01:11:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 134K
描述
N-Channel SO8FL

NTMFD4C85NT1G 数据手册

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NTMFD4C85N  
PowerPhase, Dual  
N-Channel SO8FL  
30 V, High Side 25 A / Low Side 49 A  
Features  
Co−Packaged Power Stage Solution to Minimize Board Space  
Minimized Parasitic Inductances  
www.onsemi.com  
Optimized Devices to Reduce Power Losses  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I
D
MAX  
(BR)DSS  
DS(ON)  
3.0 mW @ 10 V  
4.3 mW @ 4.5 V  
0.8 mW @ 10 V  
1.2 mW @ 4.5 V  
Q1 Top FET  
30 V  
25 A  
49 A  
Applications  
Q2 Bottom FET  
30 V  
DC−DC Converters  
System Voltage Rails  
Point of Load  
D1  
(3, 4, 9)  
(1) G1  
(2) S1  
SW (5, 6, 7)  
(8) G2  
S2 (10)  
Figure 1. Typical Application Circuit  
PIN CONNECTIONS  
D1 4  
D1 3  
5 SW  
100  
9
D1  
10  
S2  
6 SW  
95  
90  
S1 2  
G1 1  
7 SW  
8 G2  
(Bottom View)  
85  
80  
MARKING  
DIAGRAM  
V
V
V
= 12 V  
IN  
1
= 1.2 V  
OUT  
DFN8  
CASE 506CR  
4C85N  
AYWZZ  
= 5 V  
GS  
75  
70  
F
SW  
= 300 kHz  
1
T = 25°C  
A
0
5
10  
15  
20  
25  
30  
4C85N = Specific Device Code  
LOAD CURRENT (A)  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Figure 2. Typical Efficiency Performance  
POWERPHASEGEVB Evaluation Board  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
August, 2015 − Rev. 1  
NTMFD4C85N/D  

NTMFD4C85NT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFD4C85NT3G ONSEMI

完全替代

N-Channel SO8FL

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