Datasheet > NTJD4001NT2G

NTJD4001NT2G

更新时间： 2024-09-14 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
5页	72K
描述
Dual N-Channel Small Signal MOSFET 30V 250mA 1.5Ω

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中文翻译

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数据手册
替代型号

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NTJD4001NT2G 数据手册

NTJD4001N, NVTJD4001N

Small Signal MOSFET

30 V, 250 mA, Dual N−Channel, SC−88

Features

• Low Gate Charge for Fast Switching

• Small Footprint − 30% Smaller than TSOP−6

• ESD Protected Gate

www.onsemi.com

TYP

I Max

• AEC Q101 Qualified − NVTJD4001N

• These Devices are Pb−Free and are RoHS Compliant

(BR)DSS

DS(on)

1.0 W @ 4.0 V

1.5 W @ 2.5 V

250 mA

30 V

Applications

• Low Side Load Switch

• Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC

• Buck Converters

• Level Shifts

SOT−363

SC−88 (6 LEADS)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25 °C

250

180

272

State

T = 85 °C

Top View

Power Dissipation

(Note 1)

Steady T = 25 °C

State

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

Pulsed Drain Current

t =10 ms

600

Operating Junction and Storage Temperature

T , T

−55 to

150

°C

STG

Source Current (Body Diode)

250

260

TE M G

SOT−363

CASE 419B

STYLE 26

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

THERMAL RESISTANCE RATINGS (Note 1)

S1 G1 D2

Parameter

Symbol

Value

458

Unit

= Device Code

= Date Code

= Pb−Free Package

Junction−to−Ambient − Steady State

Junction−to−Lead − Steady State

°C/W

252

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

1. Surface mounted on FR4 board using min pad size

(Cu area = 0.155 in sq [1 oz] including traces).

†

Device

NTJD4001NT1G

Package

Shipping

SOT−363

(Pb−Free)

3000 / Tape &

Reel

NVTJD4001NT1G SOT−363

(Pb−Free)

3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2015 − Rev. 7

NTJD4001N/D

12 3 4 5

中文翻译

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NTJD4001NT2G 替代型号

型号	品牌	替代类型	描述	数据表
NTJD4001NT1	ONSEMI	类似代替	Small Signal MOSFET
NTJD5121NT1G	ONSEMI	功能相似	Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88
NTJD4001NT1G	ONSEMI	功能相似	Small Signal MOSFET

与NTJD4001NT2G相关器件

型号	品牌	获取价格	描述	数据表
NTJD4105C	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT1	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT1G	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT2	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT2G	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT4	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT4G	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4152P	ONSEMI	获取价格	Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88
NTJD4152PT1	ONSEMI	获取价格	Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88
NTJD4152PT1G	ONSEMI	获取价格	Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88

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