NTJS3151PT1

更新时间： 2024-09-15 02:54:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	134K
描述
Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88

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NTJS3151PT1 数据手册

NTJS3151P

Trench Power MOSFET

12 V, 3.3 A, Single P−Channel,

ESD Protected SC−88

Features

http://onsemi.com

• Leading Trench Technology for Low R

Extending Battery Life

DS(ON)

• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)

• Gate Diodes for ESD Protection

Typ

I Max

(BR)DSS

DS(on)

45 mW @ −4.5 V

67 mW @ −2.5 V

• Pb−Free Packages are Available

−12 V

−3.3 A

Applications

133 mW @ −1.8 V

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

SC−88 (SOT−363)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value Units

DSS

−12

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25 °C

−2.7

−2.0

−3.3

0.625

State

T = 85 °C

t ≤ 5 s

T = 25 °C

Top View

Power Dissipation

(Note 1)

Steady T = 25 °C

State

Pulsed Drain Current

t = 10 ms

−8.0

3 kW

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

Source Current (Body Diode)

−0.8

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

THERMAL RESISTANCE RATINGS (Note 1)

MARKING DIAGRAM &

PIN ASSIGNMENT

Parameter

Symbol

Max

200

141

102

Units

Junction−to−Ambient – Steady State

Junction−to−Ambient − t ≤ 5 s

Junction−to−Lead – Steady State

°C/W

TJ M G

SC−88/SOT−363

CASE 419B

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

STYLE 28

= Device Code

= Date Code

= Pb−Free Package

(Cu area = 1.127 in sq [1 oz] including traces).

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

March, 2006 − Rev. 2

NTJS3151/D

12 3 4 5 6

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与NTJS3151PT1相关器件

型号	品牌	获取价格	描述	数据表
NTJS3151PT1G	ONSEMI	获取价格	Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS3151PT2	ONSEMI	获取价格	Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS3151PT2G	ONSEMI	获取价格	Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88
NTJS3157N	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT1	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT1G	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT2	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT2G	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT4	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88
NTJS3157NT4G	ONSEMI	获取价格	Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88

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