Datasheet > NTK3139P

NTK3139P

更新时间： 2024-11-26 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	60K
描述
Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723

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NTK3139P 数据手册

NTK3139P

Power MOSFET

−20 V, −780 mA, Single P−Channel with

ESD Protection, SOT−723

Features

http://onsemi.com

• P−channel Switch with Low R

DS(on)

• 44% Smaller Footprint and 38% Thinner than SC−89

TYP

I Max

(BR)DSS

DS(on)

• Low Threshold Levels Allowing 1.5 V R

• Operated at Low Logic Level Gate Drive

• These are Pb−Free Devices

Rating

0.38 W @ −4.5 V

0.52 W @ −2.5 V

0.70 W @ −1.8 V

0.95 W @ −1.5 V

−780 mA

−660 mA

−100 mA

DS(on)

−20 V

Applications

• Load/Power Switching

• Interfacing, Logic Switching

• Battery Management for Ultra Small Portable Electronics

SOT−723 (3−LEAD)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

−20

Unit

DSS

Continuous Drain

Current (Note 1)

Steady

State

T = 25°C

−780

−570

−870

450

T = 85°C

t v 5 s

T = 25°C

Top View

1 − Gate

2 − Source

3 − Drain

Power Dissipation

(Note 1)

Steady

State

T = 25°C

t v 5 s

550

−660

−480

310

Continuous Drain

Current (Note 2)

Steady

State

T = 25°C

MARKING DIAGRAM

T = 85°C

KD M

Power Dissipation

(Note 2)

T = 25°C

SOT−723

CASE 631AA

STYLE 5

Pulsed Drain Cur-

rent

t = 10 ms

−1.2

KD = Specific Device Code

= Date Code

Operating Junction and Storage Tempera-

ture

T , T

−55 to

150

°C

STG

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

ORDERING INFORMATION

†

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces)

Device

Package

Shipping

NTK3139PT1G

NTK3139PT5G

SOT−723* 4000 / Tape & Reel

SOT−723* 8000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2. Surface mounted on FR4 board using the minimum recommended pad size

*These packages are inherently Pb−Free.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

December, 2006 − Rev. 0

NTK3139P/D

12 3 4 5

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与NTK3139P相关器件

型号	品牌	获取价格	描述	数据表
NTK3139PT1G	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#
NTK3139PT1H	ONSEMI	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
NTK3139PT5G	ONSEMI	获取价格	Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT&#
NTK3139PT5H	ONSEMI	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
NTK3142P	ONSEMI	获取价格	High Efficiency DC-DC Converters
NTK3142PT1G	ONSEMI	获取价格	Small Signal MOSFET â20 V, â280 mA, PâC
NTK3142PT1G	ROCHESTER	获取价格	215mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 631AA-01, 3 PIN
NTK3142PT5G	ROCHESTER	获取价格	215mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 631AA-01, 3 PIN
NTK3142PT5G	ONSEMI	获取价格	小信号 MOSFET，20V，280mA，3.4Ω，单 P 沟道，SOT-723，带 ES
NTK4401NT1G	ONSEMI	获取价格	20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 631AA-01, 3 PIN

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